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IS61NVP25672-200B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IRF3703-IRF3703PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
. PD-93918
International
TOR Rectifier SMPS MOSFET IRF3703
HEXFET© Power MOSFET
Applications
o Synchronous Rectification
q Active ORing
VDss RDS(on) max ID
30V 2.8mf2 21oA©
Benefits
0 Ultra Low On-Resistance
o Low Gate Impedance to Reduce Switching
Losses
o Fully Avalanche Rated
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V 210 ©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 © A
IDM Pulsed Drain Current C) 1000
Pro @Tc = 25°C Power Dissipation 230 W
PD @TA = 25°C Power Dissipation 3.8
Linear Derating Factor 1.5 Wl°C
VGS Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 175 "C
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.65
Recs Case-to-Sink, Flat, Greased Surface 0.5 - ''C/W
RQJA Junction-to-Ambient - 62
Notes C) through © are on page 8
1
02/27/01
IRF3703 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25°C, ID = 1mA
. . . - 2.3 2.8 Ffas = 10V, ID = 76A ©
- - - r mn
RDS(on) Static Drain to Source On Resistant: - 2.8 3.9 Was = 7.0V, ID = 76A ©
VGSith) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGS, ID = 250pA
. - - 20 Vos = 24V, VGS = 0V
I Drain-to-Source Leaka e Current A
DSS g - - 250 p Vos = 24V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 150 - - S Vos = 24V, ID = 76A
% Total Gate Charge - 209 - ID = 76A
Q95 Gate-to-Source Charge - 62 - nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 42 - VGs=10V, (D
Mon) Turn-On Delay Time - 18 - VDD = 15V, VGS = 10V
tr Rise Time - 123 - ns ID = 76A
tam) Turn-Off Delay Time - 53 - Rs = 1.8n
t, Fall Time - 24 - VGS = 10V ©
Ciss Input Capacitance - 8250 - VGs = 0V
Coss Output Capacitance - 3000 - Vos = 25V
Crss Reverse Transfer Capacitance - 290 - pF f = 1.0MHz
Coss Output Capacitance - 10360 - VGS = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 3060 - VGS = 0V, Vros = 24V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 2590 - VGs = 0V, Vos = 0V to 24V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 1700 mJ
IAR Avalanche Current0D - 76 A
EAR Repetitive Avalanche Energy© - 23 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 210© MOSFET symbol D
(Body Diode) - - A showing the
ISM Pulsed Source Current 1000 integral reverse G
(Body Diode) (D --..- _ p-n junction diode. s
Va, Diode Forward Voltage - 0.8 1.3 V T: = 25°C, Is = 76A, VGs = 0V ©
trr Reverse Recovery Time - 80 120 ns TJ = 25°C, Ir: = 76A, VDs = 16V
Qrr Reverse RecoveryCharge - 185 275 nC di/dt = 100A/ps ©
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