IRF360 ,400V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF3703 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D Synchronous Rectification 30V 2.8mΩ 210A Active ORingBenefits ..
IRF3703PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93918IRF3703SMPS MOSFET®HEXFET Power MOSFET
IRF3704 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93888BIRF3704IRF3704SSMPS MOSFETIRF3704L®
IRF3704L ,20V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 93888BIRF3704IRF3704SSMPS MOSFETIRF3704L®
IRF3704PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rec ..
IS61NLP25672-200B1I , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP51236-200B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP51236-200TQI , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NP25636-133TQ , 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NSCS25672-250B , RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM
IS61NVF102418-7.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IRF360
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
International
IEZR Rectifier
PD-90518
REPETITIVE AVALANCHEAND dv/dt RATED IRF36O
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part N umber BVDSS RDS(on) m
IRF360 400V 0209 25A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
400V, N-CHANNEL
tr:--"-';;))
verse energy and diode recovery dv/dt capability. TO'3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. ll Repetitive Avalanche Ratings
They are well suited for applications such as switching © Dynamlc dv/dt Rating
power supplies, motor controls, inverters, choppers, audio I: Hermetically Sealed
amplifiers and high energy pulse circuits. ll Simple Drive Requirements
ll Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 25
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 16 A
IDM Pulsed Drain Current C) 100
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 980 mJ
IAR Avalanche Current Cf) 25 A
EAR Repetitive Avalanche Energy co 30 m.)
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRF360
International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.46 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - 0.20 VGS = 10V, ID = 16A G)
Resistance - - 0.23 VGS = 10V, ID =25A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 14 - - S (V) VDS > 15V, IDS = 16A ©
IDSS Zero Gate Voltage Drain Current - - 25 VDS=320V,VGS=0V
- - 250 HA VDS =320v
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGs=20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge 96 - 210 V68 = 10V, ID =25A
Qgs Gate-to-Source Charge 1 1 - 2 8 nC VDS = 200V
Qgd Gate-to-Drain ('Miller') Charge 53 - 120
td(on) Turn-On Delay Time - - 3 3 VDD =200V, ID =25A,
tr Rise Time - - 140 RG =2.35f2
tti(om Turn-Off Delay Time - - 120 n S
tf Fall Time - - 99
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/0.251n. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 4200 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 900 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 400 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 25 A
ISM Pulse Source Current (Body Diode) C) - - 100
VSD Diode Forward Voltage - - 1.8 V Tj = 25°C, IS = 25A, VGS = 0V co
trr Reverse Recovery Time - - 1000 nS Tj = 25°C, IF = 25A, di/dt S 100A/ys
QRR Reverse Recovery Charge - - 16 pC VDD S 50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 0.42 'C/W
RthJ A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
