IRF3515STRLPBF ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplications V R I
. Switch Mode Power Supply (SMPS) DSS DS(on) max D
o Uninterruptible Power Sup ..
IRF360 ,400V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF3703 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D Synchronous Rectification 30V 2.8mΩ 210A Active ORingBenefits ..
IRF3703PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93918IRF3703SMPS MOSFET®HEXFET Power MOSFET
IRF3704 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93888BIRF3704IRF3704SSMPS MOSFETIRF3704L®
IRF3704L ,20V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 93888BIRF3704IRF3704SSMPS MOSFETIRF3704L®
IS61NLP25672-200B1I , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP51236-200B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP51236-200TQI , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NP25636-133TQ , 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NSCS25672-250B , RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM
IS61NVF102418-7.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IRF3515STRLPBF
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR Rectifier
Applications
PD - 95121
IRF3515S/LPbF
HEXFET® Power MOSFET
. Switch Mode Power Supply (SMPS) Ihass Rraston) max '0
o Uninterruptible Power Supply 150V 0.0459 41A
q High speed power switching
q Lead-Free
Benefits
q Low Gate Charge Og results in Simple
Drive Requirement 'i'ajlt
. Improved Gate, Avalanche and dynamic _
dv/dt Ruggedness
a Fully Characterized Capacitance and
Avalanche Voltage and Current D2Pak TO-262
o Effective Coss Specified (See AN 1001) IRF3515S IRF3515L
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vcs o 10V 41
ID © Tc = 100°C Continuous Drain Current, VGS © 10V 29 A
IDM Pulsed Drain Current CO 164
PD ©Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/“C
VGS Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 4.3 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Applicable Off Line SMPS Topologies
o Telcom 48V input DC/DC Active Clamp Reset Forward Converter
Notes C) through © are on page 10
1
3/17/04
http://www.loq.com/
IRF3515S/LPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units] Conditions
V(Bn)Dss Drain-to-Source Breakdown Voltage 150 - - V l/tss = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.21 - V/°C Reference to 25°C. ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.045 n V65 = 10V. ID = 25A (4)
VGS(m) Gate Threshold Voltage 3.0 - 4.5 V Vos = Vas, ID = 250pA
bss Drain-to-Source/age/nt - - JI, m "tsl/fl:','):,.:)]:,,,--,:,.,
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Dynamic © To = 25°C (unless otherwise soecified)
Parameter Min. Typ. Max. Units Conditions
gys Forward Transconductance 15 - - S V05 = 50V, ID = 25A
09 Total Gate Charge - - 107 ID = 25A
ths Gate-to-Source Charge - - 23 nC Vps = 120V
di Gate-to-Drain ("Millee) Charge - - 65 Vss = 10V, See Fig. 6 and 13 ©
town) Turn-On Delay Time - 17 - l/oo = 75V
tr Rise Time - 120 - ns lo = 25A
tum") Tum-Off Delay Time - 34 - Rs = 2.50
tt Fall Time - 63 - R0 = 3.0n,See Fig. 10 ©
Ciss Input Capacitance - 2260 - Vas = 0V
Cass Output Capacitance - 530 - Vos = 25V
Crss Reverse Transfer Capacitance - 170 -- pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 3330 - Vss = OV, VDs = 1.0V, f = 1.0MHz
Cass Output Capacitance ---- 230 - l/tss = OV, VDs = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 280 - Vss = ov, Vos = 0V to 120V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 670 m0
bu, Avalanche CurrentCD - 25 A
EAR Repetitive Avalanche Energy0) - 20 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 0.75 "CAN
RNA Junction-to-Ambient ( PCB Mounted, steady-state)" - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current -- - 41 MOSFET symbol "
(Body Diode) A showing the
IsM Pulsed Source Current integral reverse c.
(Body Diode) G) - - 164 p-n junction diode. s
VsD Diode Forward Voltage -- - 1.3 V TJ = 25°C. ls = 25A, Vss = 0V ©
trr Reverse Recovery Time - 200 300 ns Tu = 25°C, I; = 25A
Orr Reverse RecoveryCharge - 1.6 2.4 pC di/dt = 1OOA/ps ©
ton Forward Tum-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
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