JANTX2N6768 ,400V Single N-Channel Hi-Rel MOSFET in a TO-204AE packagePD - 90339FIRF350REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6768HEXFET TRANSISTORS JANTXV2N6768 ..
JANTX2N6782 ,100V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N6786 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N6788 ,100V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N6790 ,200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90427CIRFF220REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6790HEXFET TRANSISTORS JANTXV2N679 ..
JANTX2N6792 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD -90428CIRFF320REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6792HEXFET TRANSISTORS JANTXV2N6792 ..
K7812-500 , SINGLE POSITIVE/NEGATIVE OUTPUT
K7815-500 , SINGLE POSITIVE/NEGATIVE OUTPUT
K78X6-1000 , WIDE INPUT NON-ISOLATED & REGULATED SINGLE OUTPUT
K78X6-500 , SINGLE POSITIVE/NEGATIVE OUTPUT
K7A161830B-QC16 , 512Kx36 & 1Mx18 Synchronous SRAM
K7A203200B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
IRF350-JANTX2N6768
N-Channel Power MOSFETs/ 15A/ 350V/400V
PD - 90339F
International
IEZR Rectifier
IRF350
REPETITIVE AVALANCHEAND dv/dt RATED J AN TX2N67 68
HEXFET®TRANSISTORS JANTXV2N6768
THRU-HOLE (TO-204AA/AE) TlRElF:MlrlL-lPlRF-19500/543l
400V, N-CHANNEL
Product Summary
Part Number anss RDS(on) In
IRF350 400V 0.3009 14A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re- TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature " Repetitive Avalanche Ratings
stability of the electrical parameters. " Dynamtc dv/dt Rating
They are well suited for applications such as switching u l1ermftifally Sealeel
power supplies, motor controls, inverters, choppers, audio I: Simple D r we 5equirements
amplifiers and high energy pulse circuits. u Ease ofParalleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 14
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 9.0 A
IDM Pulsed Drain Current C) 56
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 11.3 mJ
IAR Avalanche Current Cf) 14 A
EAR Repetitive Avalanche Energy co 15 m.)
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5 (typical) g
For footnotes refer to the last page
1
01/22/01
IRF350 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.46 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.300 n VGS = 10V, ID =9.0AC0
Resistance - - 0.400 VGS =10V, ID =14A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 6.0 - - S (U) VDS > 15V, IDS =9.0A©
IDSS Zero Gate Voltage Drain Current - - 25 VDS=320V,VGS=0V
- - 250 HA VDS =320v
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGS =20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS =-20V
Qg Total Gate Charge 52 - l 10 VGS =10V, ID=l4A
Qgs Gate-to-Source Charge 5.0 - 18 nC VDS =200V
Qgd Gate-to-Drain ('Miller') Charge 25 - 65
td(on) Turn-On Delay Time - - 3 5 VDD =200V, ID =14A,
tr Rise Time - - 190 RG =2.35f2
tti(om Turn-Off Delay Time - - 170 n S
tf Fall Time - - 130
LS + LD Total Inductance - 6.1 - nH Measured from the center of
drain pad to center of source
Ciss Input Capacitance - 2600 VGS = 0V, VDS =25V
Cogs Output Capacitance - 680 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 250 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 14 A
ISM Pulse Source Current (Body Diode) C) - - 56
VSD Diode Forward Voltage - - 1.7 V Tj = 25°C, Is =14A, VGS = 0V co
trr Reverse Recovery Time - - 1200 nS Tj = 25°C, IF =14A, di/dt SlOOA/us
QRR Reverse Recovery Charge - - 250 pc VDD S50V co
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 0.83 'C/W
Rth J A J unction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
