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IRF3415L-IRF3415S-IRF3415SPBF-IRF3415STRL-IRF3415STRR
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Reciiiier
PD - 91509C
|RF3415S/L
Advanced Process Technology
Surface Mount (IRF3415S)
Low-prof))-) (IRF3415L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efhcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
proWsapplications.
Absolute Maximum Ratings
HEXFET0 Power MOSFET
VDSS = 150V
RDS(on) = 0.042n
ID = 43A
D2Pak TO-262
Parameter
ID © TC = 25°C
Continuous Drain Current, VGS @ 10VS
l, @ TC = 100°C
Continuous Drain Current, Ves @ 10V©
Pulsed Drain Current (D6)
Pro @TA = 25°C
Power Dissipation
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
1.3 Wl°C
Gate-to-Source Voltage
Single Pulse Avalanche Energy©©
590 m]
Avalanche Current0)
Repetitive Avalanche Energy©
Peak Diode Recovery dv/dt ©©
5.0 V/ns
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, tor 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ. Max. Units
Junction-to-Case
- 0.75
Junction-to-Ambient ( PCB Mounted,steady-state)"
- 40 C/W
5/13/98
IRF3415S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.17 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.042 Q VGS = 10V, ID = 22A G)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = l/ss, ID = 250pA
gfs Forward Transconductance 19 - - S Vos = 50V, ID = 22AS
loss Drain-to-Source Leakage Current - - 25 HA I/rss = 150V, VGS = 0V
- - 250 Vros = 120V, Vss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 200 ID = 22A
095 Gate-to-Source Charge - - 17 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - - 98 Vss = 10V, See Fig. 6 and 13 £06)
tdwn) Turn-On Delay Time - 12 - VDD = 75V
tr Rise Time - 55 - ns ID = 22A
tdm Turn-Off Delay Time - 71 - Rs = 2.59
t, FalITime - 69 - Ro = 3.39, See Fig. 10 Cr)6)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 2400 - VGS = 0V
Cass Output Capacitance - 640 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 340 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ks Continuous Source Current - - 43 MOSFETsymbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 150 integral reverse G
(Body Diode) C)6) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 22A, VGS = 0V (ii)
trr Reverse Recovery Time - 260 390 ns TJ = 25°C, IF = 22A
G, Reverse Recovery Charge - 2.2 3.3 pC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L = 2.4mH
Rs = 259, IAS = 22A. (See Figure 12)
© Iso LC 22A, di/dt : 820A/ps, Va, s V(BR)DSS:
T J C 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
GD Pulse width s: 300ps; duty cycle f 2%.
S Uses IRF3415 data and test conditions
