IRF3415PBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91477DIRF3415®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = 150VD ..
IRF3415S ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91509CIRF3415S/L®HEXFET Power MOSFETl Advanced Process TechnologyDV = 150Vl Surface Mount (IRF ..
IRF3415SPBF ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IRF3415STRL ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because ofits low internal connection resistance and can dissipateup to 2.0W in a typi ..
IRF3415STRR ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF350 ,N-Channel Power MOSFETs/ 15A/ 350V/400VFeatures:lished advantages of MOSFETs such as voltage control, Repetitive Avalanche Ratingsvery fa ..
IS61NF12836-8.5TQ , 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
IS61NLF51236-6.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLF51236-6.5B3I , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLP102418-200TQ , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP25672-200B1I , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP51236-200B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IRF3415-IRF3415PBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91477D
IRF34'15
HEXFET© Power MOSFET
International
IEER Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated G
VDSS = 150V
A RDS(on) = 0.042n
Description ID = 43A
Fifth Generation HEXFETs from International RectifIer
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, l/ss @ 10V 43
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current (D 150
Pro @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy© 590 mJ
IAR Avalanche Current© 22 A
EAR Repetitive Avalanche Energy0) 20 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
5/13/98
IRF3415
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.17 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.042 n VGS = 10V, ID = 22A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = Was, ID = 250pA
9ts Forward Transconductance 19 - - S VDS = 50V, ID = 22A
loss Drain-to-Source Leakage Current - - 25 PA I/os = 150V, VGS = 0V
- - 250 VDs = 120V, Vss = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 200 ID = 22A
095 Gate-to-Source Charge - - 17 nC VDs = 120V
di Gate-to-Drain ("Miller") Charge - - 98 V65 = 10V, See Fig. 6 and 13 ©
tdion) Turn-On Delay Time - 12 - VDD = 75V
tr Rise Time - 55 - ns ID = 22A
td(off) Turn-Off Delay Time - 71 - Rs = 2.582
t, Fall Time - 69 - RD = 3.39, See Fig. 10 ©
u, Internal Drain Inductance - 4.5 - Between tad: D
nH 6mm (0.25in.) f )
from package G
Ls Internal Source Inductance - 7.5 - . _
and center of die contact s
Ciss Input Capacitance - 2400 - VGs = 0V
Coss Output Capacitance - 640 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 340 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 43 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 150 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 22A, VGS = 0V ©
trr Reverse Recovery Time - 260 390 ns To = 25°C, IF = 22A
Qrr Reverse RecoveryCharge - 2.2 3.3 PC di/dt = 100Alps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11 )
Rs = Mn, IAS-- 22A. (See Figure 12)
T J g 175°C
© VDD = 25V, starting Tu = 25''C, L = 2.4mH © Pulse width s 300ps; duty cycle S 2%.
© ISD f 22A, di/dt S 820/Ups, VDD S V(BR)rsss,
