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IRF3315-IRF3315PBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD -91623A
IRF3315
HEXFET© Power MOSFET
International
Tart, Rectifier
APPRO VED
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated G
VDSS = 150V
A RDS(on) = 0.07n
Description ID = 27A
F ifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the TO-220AB
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 27
ID @ TC = 100°C Continuous Drain Current, Vss @ 10V 19 A
IDM Pulsed Drain Current C) 108
Po @Tc = 25°C Power Dissipation 136 W
Linear Derating Factor 0.91 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 350 mJ
IAR Avalanche Current© 12 A
EAR Repetitive Avalanche Energyc0 13.6 mJ
dv/dt Peak Diode Recovery dv/dt © 2.5 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
1
12/09/98
IRF3315 APPROVED International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefhcient - 0.187 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.07 Q VGS = 10V, ID = 12A (9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
git Forward Transconductance 11.4 - - S Vos = 50V, ID = 12A
loss Drain-to-Source Leakage Current - - 25 pA Vros = 150V, VGS = 0V
- - 250 Vros = 120V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A I/tss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
% Total Gate Charge - - 95 ID = 12A
Qgs Gate-to-Source Charge - - 11 no VDS = 120V
di Gate-to-Drain ("Miller") Charge - - 47 V93 = 10V, See Fig. 6 and 13 (D
td(on) Turn-On Delay Time - 9.6 - VDD = 75V
tr Rise Time - 32 - ID = 12A
tum Turn-Off Delay Time - 49 - ns Rs = 5.19
tr Fall Time - 38 - Ro = 5.99, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between Iegd, D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1300 - N/ss = 0V
Cass Output Capacitance - 300 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 27 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 108 p-n junction diode. s
VSD Diode FonNard Voltage - - 1.3 V To = 25''C, Is = 12A, VGS = 0V ©
trr Reverse Recovery Time - 174 260 ns To = 25°C, IF = 12A
Qrr Reverse Recovery Charge - 1.2 1.7 PC di/dt = 100A/ps ©
tim Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by @ Iso f 12A, di/dt S 140Alps, VDD f V(BR)oss,
max. junction temperature. (See Ftg. 11 ) TJS 175°C
© Starting TJ = 25°C, L = 4.9mH G) Pulse width 3 300ps; duty cycle f 2%.
Rs = 25 Q, IAS-- 12A. (See Figure 12)
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