IRF3205Z ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB PackageFeatures®HEXFET Power MOSFET
IRF3205Z-IRF3205ZLPBF-IRF3205ZPBF-IRF3205ZS-IRF3205ZSPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
PD - 94653C
International
. . IRF3205Z
TOR Rectifier IRF3205ZS
|RF32052L
Features HEXFET® Power MOSFET
. Advanced Process Technology
. Ultra Low On-Resistance D
. 175°C Operating Temperature VDSS = 55V
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax . A RDS(on) = 6.5mQ
Description I - 75A
This HEXFETQ PowerMOSFET utilizesthelatest S D -
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating t r' tt'isi'
temperature, fast switching speed and improved ' fist
repetitive avalanche rating. These features l ", . "g: x41
combineto makethis design an extremelyefficient .' l, ,
and reliable device for use in a wide variety of
applications. TO-220AB D2Pak TO-262
IRF3205Z lRF3205ZS IRF3205ZL
Absolute Maximum Ratings
Parameter Max. Units
ID © TC = 25°C Continuous Drain Current, Vas © 10V (Silicon Limited) 110
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 78 A
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 75
IDM Pulsed Drain Current G) 440
PD @T0 = 25°C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
l/ss Gate-to-Source Voltage i 20 V
EAS(Thermallylimited) Single Pulse Avalanche Energy© 180 mJ
EAS(Tested ) Single Pulse Avalanche Energy Tested Value © 250
IAR Avalanche Current OD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy L9 mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw co 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.90 °C/W
Recs Case-to-Sink, Flat Greased Surface © 0.50 -
ReJA Junction-to-Ambient © - 62
ReJA Junction-to-Ambient (PCB Mount) -- 40
1
10/12/11
IRF3205ZS/L
International
TOR Rectifier
Electrical Characteristics @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 -- -- V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.051 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.9 6.5 mn Vas = 10V, ID = 66A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V l/ns = Vss, ID = 250pA
gfs Forward Transconductance 71 - - S l/rss = 25V, ID = 66A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, l/ss = 0V
- - 250 Vos = 55V, l/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -2OO Vas = -20V
q, Total Gate Charge -- 76 110 ID = 66A
As Gate-to-Source Charge - 21 - nC Vos = 44V
09:: Gate-to-Drain ("Miller") Charge - 30 - Ves = 10V ©
td(on) Turn-On Delay Time - 18 - VDD = 28V
t, Rise Time - 95 - ID = 66A
td(off) Turn-Off Delay Time .-_.- 45 -- ns Rs = 6.8 Q
t, Fall Time - 67 - Ves = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 3450 - Vss = 0V
Coss Output Capacitance - 550 - Vos = 25V
Crss Reverse Transfer Capacitance - 310 - pF f = 1.0MHz
Cass Output Capacitance - 1940 - l/ss = OV, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 430 -- Vss = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 640 - Vss = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current --- --.- 75 MOSFET symbol fl“ D
(Body Diode) A showing the i) L-i)
ISM Pulsed Source Current - - 440 integral reverse GK. CP)'
(Body Diode) OD p-n junction diode. “i” R
VSD Diode Forward Voltage -- - 1.3 V TJ = 25°C, Is = 66A, VGS = 0V oo
trr Reverse Recovery Time - 28 42 ns TJ = 25°C, IF = 66A, VDD = 25V
Qrr Reverse Recovery Charge - 25 38 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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