IRF3205STRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF3205Z ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB PackageFeatures®HEXFET Power MOSFET
IRF3205STRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD - 95106
lRF3205SPbF
IRF3205LPbF
Advanced Process Technology HEXFET6 Power MOSFET
Ultra Low On-Resistance D
Dynamic dv/dt Rating
175°C Operating Temperature
Description
Fast Switching
Fully Avalanche Rated
Lead-Free
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of applications.
International
TOR Rectifier
VDSS = 55V
RDS(on) = 8.01119
ID =11OA©
t,tii,iii),
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power 2
capability and the lowest possible on-resistance in any existing surface D Pak T0262
2 . . . . . IRF3205SPbF IRF3205LPbF
mount package. The D Pak IS suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for Iow-profile
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 110 (9
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 80 A
IDM Pulsed Drain Current co 390
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vas Gate-to-Source Voltage i 20 V
IAR Avalanche CurrentCD 62 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibfoin (1.1N0m)
Thermal Resistance
Parameter Typ. Max. Units
Rout: Junction-to-Case - 0.75 ''C/W
RBJA Junction-to-Ambient (PCB mounted, steady-state)* - 40
1
03/11/04
IRF3205S/LPbF
International
IEER Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vas = 0V, lo = 250pA
AV
RDS(on) Static Drain-to-Source On-Resistance - - 8.0 mn VGS = 10V, ID = 62A (4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V l/rss = Vas, ID = 250pA
gfs Forward Transconductance 44 - - S VDS = 25V, ID = 62A©
bss Drain-to-Source Leakage Current - - 25 pA VDS = 55V, Vas = 0V
- - 250 Vos = 44V, Vss = 0V, TJ = 150°C
Isss Gate-to-Source Forward Leakage - - 100 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vai; = -20V
Qg Total Gate Charge - - 146 ID = 62A
095 Gate-to-Source Charge - - 35 nC VDS = 44V
the Gate-to-Drain ("Miller") Charge - - 54 Vas = 10V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 101 - ns b = 62A
tum) Turn-Off Delay Time - 50 - Rs = 4.59
tf Fall Time - 65 - VGS = 10V, See Fig. 10 (4)
Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3247 - l/tas = 0V
Coss Output Capacitance -- 781 - VDS = 25V
Crss Reverse Transfer Capacitance - 211 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 1050© 2640) mJ 'As = 62A, L = 138pH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 110 .
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 390 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 62A, Vas = 0V ©
trr Reverse Recovery Time - 69 104 ns Tu = 25°C, IF = 62A
a,, Reverse Recovery Charge - 143 215 nC di/dt = 100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 138pH
R3 = 25Q, 1A3 = 62A. (See Figure 12)
© ISDS 62A, di/dt S 207A/ps, VDD S V(BR)DSS,
Tu s: 175°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
GD Pulse width S 400ps; duty cycle S 2%.
s Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
co This is a typical value at device destruction and represents
operation outside rated limits.
©This is a calculated value limited to Tu = 175°C.
For recommended footprint and soldering techniques refer to application note #AN-994.
