IRF3205PBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-91279EIRF3205®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-Resistance V = 55V ..
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IRF3205Z ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB PackageFeatures®HEXFET Power MOSFET
IRF3205-IRF3205PBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
PD-91279E
IRF3205
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
VDSS = 55V
RDS(on) = 8.0mQ
ID = 110AS)
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal TO-220AB
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 110 s
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 80 A
G, Pulsed Drain Current OD 390
Pro @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vss Gate-to-Source Voltage * 20 V
IAR Avalanche CurrentCD 62 A
EAR Repetitive Avalanche EnergyC) 20 mJ
dv/dt Peak Diode Recovery dv/dt co 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
RNA Junction-to-Ambient - 62
1
01/25/01
IRF3205
International
IEBR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.057 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 8.0 mn VGS = 10V, ID = 62A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, Io = 250PA
grs Forward Transconductance 44 - - S Vos = 25V, lo = 62A©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 55V, VGS = 0V
- - 250 Vros = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 146 ID = 62A
Qgs Gate-to-Source Charge - - 35 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 54 V68 = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 101 - ID = 62A
tdm Turn-Off Delay Time - 50 -- ns Rs = 4.59
tf Fall Time - 65 - VGS = 10V, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) Q: )
from package G
Ls Intemal Source Inductance - 7.5 - .
and center of die contact S
Ciss Input Capacitance - 3247 - I/ss = 0V
Coss Output Capacitance - 781 - Vos = 25V
Crss Reverse Transfer Capacitance - 211 - pF f = 1.0MHz, See Fig. 5
EAs Single Pulse Avalanche Energy© - 1050© 2640) mJ lAs = 62A, L = 1380H
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1 10 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)(D - - 390 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 62A, VGs = 0V ©
in Reverse Recovery Time - 69 104 ns TJ = 25''C, IF = 62A
Qrr Reverse Recovery Charge - 143 215 nC di/dt = 100/Ups G)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
OD Repetitive rating; pulse width limited by
© Pulse width S 400ps; duty cycle 5 2%.
max. junction temperature. (See Fig. 11 )
© Starting Tu = 25°C, L = 138pH
Rs = 259, MS = 62A. (See Figure 12)
© ISD S 62A, di/dt S 207A/ps, VDD S VoR)ross,
TJ s: 175°C
(S) Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
© This is a typical value at device destruction and represents
operation outside rated limits.
©This is a calculated value limited to To = 175°C.
