IRF3007 ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
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IRF3007PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
IRF3007PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesV = 75VDSS Ultra Low On-Resistance 175°C Operating TemperatureR = 0.0126ΩDS(on) Fast Swi ..
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IRF3007
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD -94424A
International
TOR Rectifier AUTOMOTIVE MOSFET IRF3007
Typical Applications HEXFET© Power MOSFET
o 42 Volts Automotive Electrical Systems
Features =
. Ultra Low On-Resistance VDSS 75V
. 175°C Operating Temperature
. Fast Switching - A RDS(on) = 0.01269
. Repetitive Avalanche Allowed up to Tjmax G
o Automotive [Q101] Qualified S ID = 75A
Description
Specifically designed for Automotive applications, this
design of HEXFETO Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of -T.
this HEXFET power MOSFET are a 175°C junction 't
operating temperature, fast switching speed and ',y,
improved repetitive avalanche rating. These combine q
to make this design an extremely efMient and reliable
device for use in Automotive applications and a wide
variety of other applications. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, N/ss @ 10V (Silicon limited) 80
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 56 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
IDM Pulsed Drain Current OD 320
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 280 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value© 946
IAR Avalanche Current0D See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N.m (lbFin)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.74
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
1
9/16/02
IRF3007 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGS = 0V, ID = 250PA
AV
RDs(on) Static Drain-to-Source On-Resistance - 10.5 12.6 mn VGS = 10V, ID = 48A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Ws = 10V, ID = 250PA
9ts FonNard Transconductance 180 - - S Vros = 25V, ID = 48A
loss Drain-to-Source Leakage Current - - 20 pA VDS = 75V, VGS = 0V
-- - 250 I/os = 60V, Vss = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Qg Total Gate Charge - 89 130 ID = 48A
Qgs Gate-to-Source Charge - 21 32 nC Vros = 60V
di Gate-to-Drain ("Miller") Charge - 30 45 I/ss = 10V
tum”) Turn-On Delay Time - 12 - VDD = 38V
tr Rise Time - 80 - ns ID = 48A
tum) Turn-Off Delay Time - 55 - Rs = 4.69
tr Fall Time - 49 - VGS = 10V ©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) Q: )
LS Internal Source Inductance - 7 5 - from package G
. and center of die contact s
Ciss Input Capacitance - 3270 - VGS = 0V
Coss Output Capacitance - 520 - pF v.33 = 25V
Crss Reverse Transfer Capacitance - 78 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 3500 - VGS = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 340 - Ves = 0V, I/os = 60V, f = 1.0MHz
Cass eff. Effective Output Capacitance s - 640 --- N/ss = 0V, VDs = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 80© A showing the
ISM Pulsed Source Current - - 320 integral reverse G
(Body Diode) G) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 48A, VGS = 0V ©
trr Reverse Recovery Time - 85 130 ns To = 25°C, I; = 48A, VDD = 38V
Qrr Reverse Recovery Charge - 280 420 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by S Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
© Starting T, = 25°C, L = 0.24mH
Rs = 25O, IAS = 48A, VGS=10V (See Figure 12).
as Coss while Vros is rising from 0 to 80% Voss .
© Limited by TJmax , see Fig.12a, 12b, 15, 16 tor typical repetitive
C3) ISD s: 48A, di/dt s 33OA/ps, vDD s V(BR)ross, T"rlche pe'forfnance‘ . .
Tu 3 175°C co This value determined from sample failure population. 100%
co Pulse width s: 400ps; duty cycle I 2%. tested to this value in production.
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