IRF2907ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.IRF2907ZPbFIRF2907ZSPbF IRF2907ZLPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T ..
IRF2907ZS ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures Advanced Process TechnologyDV = 75V Ultra Low On-Resistance DSS 175°C Operating Tempera ..
IRF2907ZS-7PPBF ,IRF2907ZS-7PPBFApplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°CContinuous Drain Current, V @ ..
IRF2907ZSTRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV = 75V 175°C O ..
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IRF2907ZPBF-IRF2907ZSTRLPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 95489D
Intemm'qml IRF2907ZPbF
TOR. Rectifier IRF2907ZSPbF
Features IRF2907ZLPbF
q Advanced Process Technology HEXFET6 Power MOSFET
q Ultra Low On-Resistance D
. 175°C OperatingTemperature VDSS = 75V
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.5mQ
. Lead-Free G
Description s ID = 160A
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating .1 P' . git,
temperature, fastswitching speed and improved 1' 's.. "1islif'ii-a,
repetitiveavalancherating.Thesefeaturescombine "\. '.. T" V ,
to make this design an extremely efficient and . l,
reliable device for use in a wide variety of
applications. TO-220AB szak T0262
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, l/ss @ 10V (Silicon Limited) 170
ID © To = 100°C Continuous Drain Current, Vss © 10V (See Fig. 9) 120 A
ID © To = 25°C Continuous Drain Current, Vss @ 10V (Wirebond Limited) 160 *
IDM Pulsed Drain Current CD 680
PD @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 w/oc
Vas Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 270 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 690
'AR Avalanche Current CD See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Res stance
Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.500
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state). - 40
HEXFET® is a registered trademark of International Rectifier.
1
07/22/10
IRF2907Z/S/LPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 75 -- -- V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.069 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.5 4.5 mg Vss = 10V, ID = 75A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250pA
gfs Forward Transconductance 180 - - S Vos = 25V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, Vas = 0V
- - 250 Vos = 75V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
q, Total Gate Charge - 180 270 ID = 75A
As Gate-to-Source Charge - 46 - nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 65 - Vss = 10V ©
td(on) Turn-On Delay Time --.- 19 --- ns VDD = 38V
t, Rise Time -- 140 -- ID = 75A
tum) Turn-Off Delay Time -- 97 -- Rs = 2.59
t, Fall Time - 100 - Vss = 10V ©
Lo Internal Drain Inductance - 5.0 - nH Between lead,
6mm (0.25in.)
Ls Internal Source Inductance - 13 - from package
and center of die contact
Ciss Input Capacitance - 7500 - pF Vas = 0V
Coss Output Capacitance - 970 - Vos = 25V
Crss Reverse Transfer Capacitance - 510 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 3640 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 650 - Vss = 0V, Vos = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1020 - Vss = 0V, Vos = 0V to 60V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 160* MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current --.- --- 680 integral reverse 6
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vas = 0V ©
tr, Reverse Recovery Time - 41 61 ns TJ = 25°C, IF = 75A, VDD = 38V
Orr Reverse Recovery Charge - 59 89 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmax, starting To = 25°C, L=0.095mH,
Rs = 259, IAS = 75A, Vas =10v.
Part not recommended for use above this value.
© ISD f 75A, di/dt S 340A/ps, VDD S V(BR)DSS'
T., 3 175°C.
© Pulse width S 1.0ms; duty cycle S 2%.
© Cass eff. is a fixed capacitance that gives the same
charging time as Coss while Vros is rising from
Oto 80% l/rss.
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
©This value determined from sample failure population.
100% tested to this value in production.
©This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
© Re is measured at To of approximately 90°C.
(DTO-220 device will have an Rth of 0.45°CNV.
* Calculated continuous current based on maximum
allowable junction temperature. Bond wire current limit is
160A.Note that current limitations arising from heating of
the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140 http:///
technical-info/appnotes/an-1140.pdf)
