IRF2907ZS ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures Advanced Process TechnologyDV = 75V Ultra Low On-Resistance DSS 175°C Operating Tempera ..
IRF2907ZS-7PPBF ,IRF2907ZS-7PPBFApplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°CContinuous Drain Current, V @ ..
IRF2907ZSTRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV = 75V 175°C O ..
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IRF2907Z -IRF2907ZS
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
Tart, Rectifier
Features
. Advanced Process Technology
. Ultra Low On-Resistance
. 175°C OperatingTemperature
. Fast Switching
. Repetitive Avalanche Allowed up to Tjmax
Description
SpecificallydesignedforAutomotive applications,
this HEXFETO Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additionalfeatures
of this design are a 175°C junction operating
PD - 95872
AUTOMOTIVE MOSFET llRF2907Z
lRF2907ZS
llRF2907ZL
HEXFET8 Power MOSFET
D VDSS = 75V
RDS(on) = 4.5mf20)
s ID = 75A
temperature, fast switching speed and improved N V l,
repetitive avalanche rating .These features com- . l,
bine to make this design an extremely efficient 2
and reliable device for use in Automotive applica- TO'220AB D Pak TO-262
tions and a wide variety of other applications. |RF2907Z IRF2907ZS IRF2907ZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 170 A
In @ To = 100°C Continuous Drain Current, Vss © 10V (See Fig. 9) 120
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 75
IBM Pulsed Drain Current CD 680
PD @Tc = 25°C Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 w/oc
Ves Gate-to-Source Voltage t. 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 300 md
EAs(tested) Single Pulse Avalanche Energy Tested Value © 690
'AR Avalanche Current CO See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175 I
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rmc Junction-to-Case © - 0.45 °C/W
Recs Case-to-Sink, Flat, Greased Surface O.50 -
RUJA Junction-to-Ambient © -- 62
RNA Junction-to-Ambient (PCB Mount, steady state)@© - 4O
HEXFETO is a registered trademark of International Rectifier.
1
06/17/04
IRF2907Z/S/L
International
TOR Rectifier
Static © To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vss = 0V, ID = 250pA
ABN/rss/AT: Breakdown Voltage Temp. Coefficient - 0.069 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.5 4.5 mg l/ss = 10V, ID = 75A ©
Vesm.) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 180 - - S Vos = 25V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 75V, Vss = 0V
-- -- 250 vDs = 75V, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
q, Total Gate Charge - 180 270 ID = 75A
As Gate-to-Source Charge - 46 - nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 65 - Vss = 10V ©
tum) Turn-On Delay Time - 19 - ns VDD = 38V
t, Rise Time - 140 - ID = 75A
td(off) Turn-Off Delay Time - 97 - Re = 2.59
it Fall Time - 100 - Ves = 10V ©
Ln Internal Drain Inductance - 5.0 - nH Between lead,
6mm (0.25in.)
Ls Internal Source Inductance -- 13 - from package
and center of die contact
Ciss Input Capacitance - 7500 --- pF Vss = 0V
Coss Output Capacitance - 970 - Vos = 25V
Crss Reverse Transfer Capacitance - 510 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 3640 - l/ss = 0V, l/rss = 1.0V, f = 1.0MHz
Coss Output Capacitance - 650 - l/ss = 0V, l/rss = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1020 - Vas = 0V, Vos = 0V to 60V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 680 integral reverse 6
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 75A, Vss = 0V ©
trr Reverse Recovery Time - 41 61 ns Tu = 25°C, IF = 75A, VDD = 38V
er Reverse Recovery Charge - 59 89 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmaX, starting Tu = 25°C,
L=O.11mH, RG = 25Q, IAS = 75A, l/ss =10V.
Part not recommended for use above this value.
© ISD S 75A, di/dt S 340A/ps, VDD S V(BR)DSS:
Tu s175°C.
GD Pulse width f 1.0ms; duty cycle 3 2%.
s Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDs is rising from O to 80% Voss.
co Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
co This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
© Ro is measured at To of approximately 90°C.
