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IRF2903Z-IRF2903ZPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD -96097A
International
TOR Rectifier IRF2903ZPbF
Features H EXFET® Power MOSFET
. Advanced Process Technology
. Ultra Low On-Resistance VDSS = 30V
. 175°COperatingTemperature
. Fast Switching -
. Repetitive Avalanche Allowed up to ijax G RDS(on) - 2.4mQ
. Lead Free s ID = 75A
Description
This HEXFETO Power MOSFET utilizes the latest D, t
processing techniques to achieve extremely low tr 'giiih
on-resistance per silicon area. Additional features S8 \...
of this design are a 175°C junction operating \ . . I s
temperature, fast switching speed and improved G D
repetitive avalanche rating.These features combine
to make this design an extremely efficient and Jegf,rg,,,
reliable device for use in a wide variety of
applications. G D s
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V (Silicon Limited) 260
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V (Silicon Limited) 180 A
ID @ To = 25°C Continuous Drain Current, Vss © 10V (Package Limited) 75
IDM Pulsed Drain Current CD 1020
PD @Tc = 25°C Power Dissipation 290 w
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage i 20 v
EAS(Thermally limited) Single Pulse Avalanche Energy© 290 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 820
IAR Avalanche Current C) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw © 10 |an (1 .1N°m)
Thermal Resistance
Parameter Typ. Max. Units
Rem Junction-to-Case - 0.51
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient © - 62
1
07/ 22/ 1 0
03ZPbF
International
TOR Rectifier
Electrical Characteristics @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 -- -- V Ves = 0V, ID = 250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient ._- 0.021 --.- V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 1.9 2.4 mf2 Vas = 10V, ID = 75A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V I/os = Vas, ID = 150pA
gfs Forward Transconductance 120 - - S Vos = 10V, b = 75A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 30V, l/ss = 0V
- - 250 Vos = 30V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
00 Total Gate Charge -- 160 240 ID = 75A
Qqs Gate-to-Source Charge - 51 - nC VDs = 24V
qu Gate-to-Drain ("Miller") Charge - 58 - Vas = 10V ©
tam") Turn-On Delay Time - 24 - Va, = 15V
t, Rise Time - 100 - lo = 75A
td(off) Turn-Off Delay Time - 48 - ns Re = 3.2 Q
t, Fall Time - 37 - Vss = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 6320 - Vas = 0V
Coss Output Capacitance - 1980 - Vos = 25V
Crss Reverse Transfer Capacitance - 1100 - pF f = 1.0MHz
Coss Output Capacitance - 5930 - Vss = 0V, l/rss = 1.0V, f = 1.0MHz
Coss Output Capacitance - 2010 - Ves = 0V, Vos = 24V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 3050 -- Vas = OV, VDs = 0V to 24V (CE)
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
IS Continuous Source Current - - 75 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current - - 1020 integral reverse
(Body Diode) (D p-n junction diode.
VSD Diode Forward Voltage -- -- 1.3 V TJ = 25°C, Is = 75A, VGS = 0V ©
trr Reverse Recovery Time - 34 51 ns TJ = 25°C, IF = 75A, VDD = 15V
G, Reverse Recovery Charge - 29 44 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by max. junction
temperature. (See fig. II).
(3 Limited by TJmax, starting To = 25°C, L = 0.10mH Re = 259,
IAS = 75A, l/ss
this value.
(3) Pulse width f 1
=10V. Part not recommended for use above
.Oms; duty cycle f 2%.
Ts Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% VDss .
C2 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
E This value determined from sample failure population. 100%
tested to this value in production.
Ct) This is only applied to TO-220AB pakcage.
ci2 R9 is measured at T: approximately 90°C
