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IRF2807ZPBF-IRF2807ZSTRLPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
International
TOR. Rectifier
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This HEXFETO Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
PD - 95488A
lRF2807ZPbF
IFIF2807ZSPbF
IRF2807ZLPbF
HEXFET® Power MOSFET
VDSS = 75V
RDS(on) = 9.4mQ
ID = 75A
combineto make this design an extremely efficient .
and reliable device for use in a wide variety of
applications. TO-220AB
lfRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF
D2Pak TO-262
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 89 A
ID © To = 100°C Continuous Drain Current, Vss © 10V (See Fig. 9) 63
ID @ To = 25°C Continuous Drain Current, I/ss @ 10V (Package Limited) 75
IBM Pulsed Drain Current (D 350
PD OTc = 25°C Maximum Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
l/ss Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 160 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value co 200
IAR Avalanche Current CD See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175 =
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.90 "C/W
Recs Case-to-Sink, Flat, Greased Surface 0.50 -
ReJA Junction-to-Ambient - 62
ReJA Junction-to-Ambient (PCB Mount, steady state). - 40
HEXFET® is a registered trademark of International Rectifier.
1
http://www.datas
heetcataloa.Com/
07/22/10
|RF2807Z/S/LPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGS = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.073 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.4 mg VGS = 10V, ID = 53A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 67 - - S Vos = 25V, ID = 53A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, Vas = 0V
- - 250 Vos = 75V, I/as = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
q, Total Gate Charge - 71 110 nC ID = 53A
093 Gate-to-Source Charge - 19 29 Vos = 60V
di Gate-to-Drain ("Miller") Charge - 28 42 Ves = 10V ©
td(on) Turn-On Delay Time --- 18 - ns VDD = 38V
t, Rise Time -- 79 -- lo = 53A
td(off) Turn-Off Delay Time -- 40 -- Rs = 6.29
t, Fall Time -- 45 - Vss = 10V ©
Lo Internal Drain Inductance -- 4.5 - nH Between lead, D
6mm (0.25in.) / "
Ls Internal Source Inductance - 7.5 - from package Gk /
and center of die contact s
Ciss Input Capacitance - 3270 - pF Vss = 0V
Coss Output Capacitance - 420 - Vrys = 25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1590 - Vss = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 280 - l/ss = 0V, Vros = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 440 - l/ss = 0V, Vros = 0V to 60V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 89 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- - 350 integral reverse a
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 53A, VGS = 0V ©
trr Reverse Recovery Time - 46 69 ns TJ = 25°C, IF = 53A, VDD = 25V
Q" Reverse Recovery Charge - 80 120 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
co Limited by TJmax, starting TJ = 25°C, L = 0.12mH,
Rs = 259, lAs = 53A, 1/ss =10V. Part not
recommended for use above this value.
© ISD S 53A, di/dt S 420/Vps, VDD S V(BR)DSS:
Tu f 175°C.
co Pulse width f 1.0ms; duty cycle 3 2%.
co Cos,S eff. is a fixed capacitance that gives the same charging time
as Cos,S while Vos is rising from 0 to 80% Voss .
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
C) This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-1O Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
