IRF2807STRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2807Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures com-bine to make this design an extremely efficientand reliable device for use in Automoti ..
IRF2807Z. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLO Advanced Process Technology®HEXFET Power MOSFETO Ultra Low On-ResistanceO Dynami ..
IRF2807ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLPbF
IRF2807STRLPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
q Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high currentapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF2807L) is available for low-
profile applications.
Absolute Maximum Ratings
PD - 95945
IRF2807SPbF
IRF2807LPbF
HEXFET© Power MOSFET
VDSS = 75V
A RDS(on) = 13mg
ID = 82A©
"cr1'sl't',t 'Rf'',
le "s \
l N, _ .
D2Pak TO-262
IRF2807SPbF IRF2807LPbF
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 82©
ID © To = 100°C Continuous Drain Current, l/ss © 10V 58 A
IDM Pulsed Drain Current co 280
PD @Tc = 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
Vas Gate-to-Source Voltage t 20 V
IAR Avalanche Currenk0 43 A
EAR Repetitive Avalanche Energy© 23 mJ
dv/dt Peak Diode Recovery dv/dt © 5.9 V/ns
TJ Operating Junction and -55 to + 175
TSTS Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew IO Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.75 °CNV
RQJA Junction-to-Ambient (PCB mount)" - 40
IRF2807S/LPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 -- -- V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.074 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 13 m9 Vas = 10V, ID = 43A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 250pA
gfs Forward Transconductance 38 - - S Vos = 50V, ID = 43ACO
loss Drain-to-Source Leakage Current - - 25 pA Vos = 75V, VGS = 0V
- - 250 VDs = 60V, Vss = 0V, To = 150°C
lsss Gate-to-Source Forward Leakage - -- 100 n A Viss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Qg Total Gate Charge - - 160 ID = 43A
Qgs Gate-to-Source Charge - - 29 n0 Vos = 60V
di Gate-to-Drain ("Miller") Charge - - 55 Vss = 10V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 13 - VDD = 38V
t, Rise Time - 64 - ns ID = 43A
td(oit) Turn-Off Delay Time - 49 - Rs = 2.59
tt Fall Time - 48 - Vas = 10V, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) (ir; )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact s
Ciss Input Capacitance - 3820 - Vas = 0V
Coss Output Capacitance - 610 - Vos = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 12806 340© mJ 'As = 50A, L = 370pH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 82© A showing the
ISM Pulsed Source Current - - 280 integral reverse G
(Body Diode)C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 43A, Vas = 0V ©
trr Reverse Recovery Time - 100 150 ns TJ = 25°C, IF = 43A
G, Reverse Recovery Charge - 410 610 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting TJ = 25°C, L = 370pH
Re = 259, IAS = 43A, VGS=1OV (See Figure 12)
© ISD S 43A, di/dt S 300A/ps, VDD S V(BR)DSS:
TJS175°C
© Pulse width S 400ps; duty cycle S 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to Tu = 175°C .
C) Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
"When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
