IRF2807PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91517IRF2807®HEXFET Power MOSFETl Advanced Process TechnologyDV = 75Vl Ultra Low On-Resistance ..
IRF2807S ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2807STRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF2807Z. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLO Advanced Process Technology®HEXFET Power MOSFETO Ultra Low On-ResistanceO Dynami ..
IRF2807ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLPbF
IRF2807-IRF2807..-IRF2807PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-91517
IRF2807
International
TOR, Rectifier
HEXFET© Power MOSFET
o Advanced Process Technology D
. Ultra Low On-Resistance VDSS = 75V
. Dynamic dv/dt Rating
0 175°C Operating Temperature . " RDS(on) = 13mn
0 Fast Switching G
0 Fully Avalanche Rated '0 = 82A0)
Description
Advanced HEXFETD Power MOSFETs from International
Rectiher utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely ethcient 's
and reliable device for use in a wide variety ofapplications. "x,
The TO-220 package is universally preferred for all "s,, 'w H
commercial-industrial applications at power dissipation _
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 82©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 58 A
IDM Pulsed Drain Current co 280
PD @Tc = 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 Wl°C
VGS Gate-to-Source Voltage 1 20 V
IAR Avalanche Current(0 43 A
EAR Repetitive Avalanche Energy0) 23 mJ
dv/dt Peak Diode Recovery dv/dt © 5.9 V/ns
To Operating Junction and -55 to + 175
Tsrs Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 0.65
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
1
3/16/01
IRF2807
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.074 - V/°C Reference to 25''C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 13 mn VGS = 10V, ID = 43A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = Was, ID = 250pA
9ts Forward Transconductance 38 - - S VDS = 50V, ID = 43A©
loss Drain-to-Source Leakage Current - - 25 pA I/os = 75V, VGS = 0V
- - 250 VDs = 60V, VGS = ov, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 160 ID = 43A
095 Gate-to-Source Charge - - 29 nC VDs = 60V
di Gate-to-Drain ("Miller") Charge - - 55 V65 = 10V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 13 - VDD = 38V
tr Rise Time - 64 - ns ID = 43A
td(off) Turn-Off Delay Time - 49 - Rs = 2.582
t, Fall Time - 48 - VGS = 10V, See Fig. 10 (4)
. Between lead, D
u, Internal Drain Inductance - 4.5 - .
nH 6mm (0.25m) _,il'/-l-" )
from package G
Ls Internal Source Inductance - 7.5 - . _
and center of die contact s
Ciss Input Capacitance - 3820 - VGs = 0V
C055 Output Capacitance - 610 - Vros = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 12806 340© mJ IAS = 50A, L = 370pH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 820) A showing the
ISM Pulsed Source Current - - 280 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25°C, ls = 43A, VGS = 0V ©
trr Reverse Recovery Time - 100 150 ns TJ = 25°C, IF = 43A
G, Reverse Recovery Charge - 410 610 nC di/dt = 100/Ups co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
C) Starting Tu-- 25°C, L = 370pH
RG = 259, IAS-- 43A, VGS=10V (See Figure 12)
© ISD S 43A, di/dt S 300A/ps, VDD S V(sRVss,
TJs175°c
© Pulse width f 400ps; duty cycle f 2%.
S This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
