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IRF2805STRLPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
152R Rectifier
Typical Appl
ications
PD - 95944A
IFlF2805SPbF
llRF2805LPbF
HEXFET® Power MOSFET
. Industrial Motor Drive
Features
Lead-Free
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Voss = 55V
A RDS(on) = 4.7mf2
s ID = 135A©
This HEXFET© Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance persilicon area. Additional features ofthis
product are a175°Cjunction operating temperature,
fastswitching speed and improved repetitive avalanche
rating . These features combine to make this design
an extremely efficient and reliable device for use in a D2Pak TO-262
wide variety of applications. IRF2805SPbF IRF2805LPbF
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, l/ss © 10V 1356)
ID © Tc = 100°C Continuous Drain Current, l/ss @ 10V 96© A
IDM Pulsed Drain Current co 700
PD ©Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vai; Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 380 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value© 1220
IAR Avalanche CurrentCD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 2.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range oC
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75 "C/W
RQJA Junction-to-Ambient(PCB Mounted, steady state)" - 40
HEXFET(R) is a registered trademark of International Rectifier.
|RF2805S/LPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250uA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.06 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.9 4.7 mn Vss = 10V, ID = 104A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 91 - - S Vos = 25V, ID = 104A
loss Drain-to-Source Leakage Current - - 20 pA Vros = 55V, l/ss = 0V
- - 250 VDS = 44V, l/ss = 0V, To = 150°C
Kass Gate-to-Source Forward Leakage - - 200 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
% Total Gate Charge - 150 230 ID = 104A
ths Gate-to-Source Charge - 38 57 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 52 78 Vss =10V©
Won) Turn-On Delay Time -- 14 -- VDD = 28V
t, Rise Time - 120 - ns ID = 104A
td(off) Turn-Off Delay Time - 68 - Re = 2.59
if Fall Time - 110 - Vss = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lefad, D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance __- 7.5 --.- .
and center of die contact s
Ciss Input Capacitance - 5110 - Vas = 0V
Coss Output Capacitance - 1190 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6470 - Vias = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance .-_- 860 - Vss = 0V, VDs = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance (9 - 1600 - Vss = 0V, Ihas = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 175© A showing the
ISM Pulsed Source Current _ - 700 integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 104A, Vss = 0V (D
trr Reverse Recovery Time - 80 120 ns Tu = 25°C, V = 104A
Qrr Reverse Recovery Charge - 290 430 nC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(9 Coss eff. is a fixed capacitance that gives the same charging time
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting Tu = 25°C, L = 0.08mH ©
Ra = 259, IAS-- 104A. (See Figure 12).
© ISD S 104A, di/dt S 240A/ps, VDD S V(BH)DSS! ©
Tu f 175°C
© Pulse width s 400ps; duty cycle 5 2%.
as Cass while VDS is rising from 0 to 80% VDss .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
