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IRF2805
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Typical Applications
. Climate Control, ABS, Electronic Braking,
Windshield wipers
Features
Description
Specifically designed for Automotive applications, this HEXFET6 Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance persilicon area. Additional features ofthis design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
AUTOMOTIVE MOSFET
PD - 94428
IRF2805
HEXFET® Power MOSFET
Advanced Process Technology G
Ultra LowOn-Resistance
175°C Operating Temperature
Fast Switching
RDS(on) = 4.7mQ
VDSS = 55V
ID = 75A
Repetitive Avalanche Allowed up to Tjmax
applications and a wide variety of other applications. TO-ZZOAB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 175
ID @ To = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 120 A
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
IBM Pulsed Drain Current OD 700
Pro @Tc = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 Wl°C
l/ss Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 450 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value© 1220
IAR Avalanche Current© See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N.m (lbFin)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
ReJA Junction-to-Ambient - 62
HEXFET(R) is a registered trademark of International Rectifier.
1
8/8/02
IRF2805
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V N/ss = 0V, lo = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.06 - V/°C Reference to 25°C, ID = 1mA
RDSW) Static Drain-to-Source On-Resistance - 3.9 4.7 mn VGS = 10V, ID = 104A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = 10V, ID = 250pA
gfs Forward Transconductance 91 - - S Vos = 25V, ID = 104A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, VGS = 0V
- - 250 I/css = 55V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
% Total Gate Charge - 150 230 ID = 104A
095 Gate-to-Source Charge - 38 57 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 52 78 VGS = 10V©
Mon) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 120 - ns ID = 104A
td(off) Turn-Off Delay Time - 68 - Rs = 2.59
tf Fall Time - 110 - l/ss = 10V G)
Lo Internal Drain Inductance - 4.5 - Between Iesd, D
M 6mm (0.25in.) JC: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5110 - VGS = 0V
Coss Output Capacitance - 1190 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6470 - VGS = ov, 1/ros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 860 - Ves = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1600 - Ves = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 175 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 700 integral reverse G
(Body Diode) (D p-n junction diode. s
Va, Diode Forward Voltage - - 1.3 V To = 25''C, Is = 104A, VGS = 0V ©
trr Reverse Recovery Time - 80 120 ns To = 25°C, IF = 104A
Qrr Reverse Recovery Charge - 290 430 nC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
Notes:
© Cass eff. is a flxed capacitance that gives the same charging time
OD Repetitive rating; pulse width limited by
max. junction temperature. (See ng. 11).
© Starting To = 25°C, L = 0.08mH
Rs = 259, IAS = 104A. (See Figure 12).
© ISD S 104A, di/dt S 240A/ps, VDD S V(BR)rsss,
T J 3 175°C
© Pulse width 5 400ps; duty cycle S 2%.
avalanche performance.
as Coss while Vos is rising from 0 to 80% Voss .
© Limited by TJmaX , see Fig.12a, 12b, 15, 16 for typical repetitive
© This value determined from sample failure population. 100%
tested to this value in production.
