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IRF2804S-7P
AUTOMOTIVE MOSFET
International
TOR. Rectifier
Features
. Advanced P
Fast Switchi
Description
Specificallydesigned forAutomotive applications,
this HEXFET® Power MOSFET utilizes the latest
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to ijax
AUTOMOTIVE MOSFET
PD - 96891
lRF2804S-7P
HEXFET® Power MOSFET
rocess Technology
G (Pin 1)
s (Pin 2, 3 ,5,6,7)
VDSS = 40V
RDS(on) = 1.6mQ
ID =160A
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves © 10V (Silicon Limited) 320 A
ID © To = 100°C Continuous Drain Current, l/ss @ 10V (See Fig. 9) 230
ID @ Tc = 25°C Continuous Drain Current, Vss © 10V (Package Limited) 160
IDM Pulsed Drain Current OD 1360
PD @TC = 25°C Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
Vas Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 630 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 1050
|AR Avalanche Current C) See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy s mJ
Tu Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf'in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RoJc Junction-to-Case - 0.50 ''C/W
R003 Case-to-Sink, Flat, Greased Surface 0.50 -
ROJA Junction-to-Ambient _ 62
RNA Junction-to-Ambient (PCB Mount, steady state) ©© - 40
HEXFET® is a registered trademark of International Rectifier.
1
9/6/04
IRF2804S-7P
International
TOR Reciiiier
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250PA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 0.028 - V/°C Reference to 25°C, ID = 1mA
RDSM) SMD Static Drain-to-Source On-Resistance - 1.2 1.6 m9 I/ss = 10V, ID = 160A ©
VGSM Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250PA
gfs Forward Transconductance 220 .-_- - S Vos = 10V, lo = 160A
IDSS Drain-to-Source Leakage Current - - 20 pA Vos = 40V, Vss = 0V
- - 250 Vos = 40V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - -- -200 Vss = -20V
th Total Gate Charge - 170 260 nC ID = 160A
Qgs Gate-to-Source Charge - 63 - Vos = 32V
gd Gate-to-Drain ("Miller") Charge - 71 - Vss = 10V ©
td(on) Turn-On Delay Time - 17 - ns Va, = 20V
t, Rise Time - 150 - b = 160A
tam) Turn-Off Delay Time - 110 - Rs = 2.69
t, Fall Time __- 105 - Vss = 10V co
u, Internal Drain Inductance - 4.5 - nH Between lead, D
6mm (0.25in.) /f" li:;
Ls Internal Source Inductance - 7.5 - from package egg)
and center of die contact 7 "i,''
Ciss Input Capacitance - 6930 - pF Vas = 0V
cu, Output Capacitance - 1750 - VDS = 25V
Crss Reverse Transfer Capacitance - 970 -- f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 5740 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
cu, Output Capacitance - 1570 - Vss = 0V, Vos = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 2340 - Ves = 0V, Vos = 0V to 32V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 320 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 1360 integral reverse G
(Body Diode) OD p-n junction diode. S
l/sr, Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 160A, VGS = 0V ©
trr Reverse Recovery Time - 43 65 ns To = 25°01 IF = 160A, VDD = 20V
Qrr Reverse Recovery Charge - 48 72 nC di/dt = 1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmax, starting To = 25°C,
L=0.049mH, Rs = 259, IAS; = 160A, Vas =1OV.
Part not recommended for use above this value.
© Pulse width S 1.0ms; duty cycle 5 2%.
Ci) Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDs is rising from 0 to
80% Voss.
(9 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
© This value determined from sample failure population. 100%
tested to this value in production.
co This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-1O Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R9 is measured at TJ of approximately 90°C.
