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IRF2804LPBF-IRF2804PBF
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 95332B
'“JEFEOT'EQGI llRF2804PbF
TOR. ec I ler IRF2804SPbF
Features IRF2804LPbF
. Advanced Process Technology HEXFET® Power MOSFET
q Ultra Low On-Resistance
o 175°C OperatingTemperature D VDSS = 40V
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax - S)
. Lead-Free G Rroson) - 2.0m99
Description s ID = 75A
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating .1 'diiy giiy
temperature, fast switching speed and improved Ntrcf N, "i1if'iiti' R'ls'"t
repetitiveavalancherating.Thesefeaturescombine \_ _ . l,
to make this design an extremely efficient and .' l,
reliable device for use in a wide variety of other
applications. TO-220AB D2Pak TO-262
IRF2804PbF IRF2804SPbF IRF2804LPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 270 A
In @ To = 100°C Continuous Drain Current, Vss @ 10V (See Fig. 9) 190
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 75
IDM Pulsed Drain Current (D 1080
PD @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Vas Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 540 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 1160
IAR Avalanche Current (l) See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © m J
TJ Operating Junction and -55 to + 175 °C
TSTS Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 lbf-in (1 .1N'm)
Thermal Res stance
Parameter Typ. Max. Units
Rom Junction-to-Case - 0.500 °C/W
R005 Case-to-Sink, Flat, Greased Surface 0.50 -
ROJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 40
HEXFET® is a registered trademark of International Rectifier.
1
05/12/10
|RF2804/S/LPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vas = 0V, ID = 250pA
ABN/rss/AT: Breakdown Voltage Temp. Coefficient - 0.031 - V/°C Reference to 25°C, ID = 1mA
RDS(on) SMD Static Drain-to-Source On-Resistance - 1.5 2.0 mg Vss = 10V, ID = 75A ©
RDS(on) TO-220 Static Drain-to-Source On-Resistance - 1.8 2.3 Vss = 10V, ID = 75A ©
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V Vos = Vss, ID = 250pA
gfs Forward Transconductance 130 -- -- S Vos = 10V, ID = 75A
loss Drain-to-Source Leakage Current -- -- 20 pA l/rss = 40V, Vss = 0V
- - 250 l/rss = 40V, Vss = ov, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
09 Total Gate Charge - 160 240 nC ID = 75A
095 Gate-to-Source Charge - 41 62 Vos = 32V
di Gate-to-Drain ("Miller") Charge - 66 99 Vas = 10V Cl)
td(on) Turn-On Delay Time - 13 - ns VDD = 20V
t, Rise Time - 120 - ID = 75A
td(off) Turn-Off Delay Time - 130 - Rs = 2.59
tr Fall Time - 130 - Vos = 10V ©
Lo Internal Drain Inductance -- 4.5 -- nH Between lead, D
6mm (0.25in.) Ki:
Ls Internal Source Inductance -- 7.5 -- from package (lr, "
and center of die contact s
Ciss Input Capacitance - 6450 - pF Vss = 0V
Coss Output Capacitance - 1690 - Vos = 25V
Crss Reverse Transfer Capacitance - 840 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 5350 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1520 - Vas = 0V, Vos = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 2210 - Vss = OV, Vos = OV to 32V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 270 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- - 1080 integral reverse e
(Body Diode) O) p-n iunction diode. s
l/so Diode Forward Voltage - - 1.3 v TJ = 25''C, Is = 75A, Ves = 0V ©
trr Reverse Recovery Time - 56 84 ns TJ = 25''C, IF = 75A, VDD = 20V
Q,, Reverse Recovery Charge - 67 100 no di/dt = IMA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmaX, starting Tu = 25°C,
L=0.24mH, Rs = 259, IAS = 75A, l/ss =10V.
Part not recommended for use above this value.
© ISD S 75A, di/dt S 220A/ps, VDD S V(BR)DSS:
TJ f 175°C.
© Pulse width 3 1.0ms; duty cycle S 2%.
© Cass eff. is a fixed capacitance that gives the same
charging time as Coss while Vos is rising from O to 80%
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
co This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
© Max RDS(on) for D2Pak and TO-262 (SMD) devices.
& TO-220 device will have an Rth value of 0.45°C/W.
