IRF240 ,N-Channel Power MOSFETs/ 18A/ 150-200Vapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF242 ,N-CHANNEL POWER MOSFETapplications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid ..
IRF244 ,14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsFeatures Description• 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gatep ..
IRF250 ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.PD - 90338EIRF250REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6766HEXFET TRANSISTORS JANTXV2N6766 ..
IRF2804 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures Advanced Process TechnologyDV = 40V Ultra Low On-Resistance DSS 175°C Operating Tempera ..
IRF2804. ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°CContinuous Drain Current, V @ ..
IS61LV5128-10TI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128-15T , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10BI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10BLI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10K , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-12T , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IRF240
N-Channel Power MOSFETs/ 18A/ 150-200V
International
IEZR Rectifier
PD - 90370
REPE I I I I V E AVALANCHE AND dV/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part N umber BVDSS RDS(on) m
IRF240 200V 0189 18A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
IRF24O
200V, N-CHANNEL
verse energy and diode recovery dv/dt capability. TO'3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. ll Repetitive Avalanche Ratings
They are well suited for applications such as switching © Dynamlc dv/dt Rating
power supplies, motor controls, inverters, choppers, audio I: Hermetically Sealed
amplifiers and high energy pulse circuits. ll Simple Drive Requirements
ll Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current l 8
1D @ VGS = 0V, TC = 100°C Continuous Drain Current 1 l A
IDM Pulsed Drain Current C) 72
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 450 m1
IAR Avalanche Current Cf) 18 A
EAR Repetitive Avalanche Energy co 12.5 m.)
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRF240 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.29 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.18 n VGS = 10V, ID = 11A@
Resistance - - 0.21 VGS = 10V, ID =18A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 6.1 - - S (V) VDS > 15V, IDS = 11A ©
IDSS Zero Gate Voltage Drain Current - - 25 VDs=160V,VGs=OV
- - 250 HA VDs = 160V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGs=20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge 32 - 60 VGS =10V, ID =18A
Qgs Gate-to-Source Charge 2.2 - 10.6 nC VDS = 100V
Qgd Gate-to-Drain ('Miller') Charge 14 - 38
td(on) Turn-On Delay Time - - 20 VDD =100V, ID =18A,
tr Rise Time - - 152 RG =9.lf2
tti(om Turn-Off Delay Time - - 5 8 n S
tf Fall Time - - 67
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/0.251n. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 1300 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 400 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 130 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 18 A
ISM Pulse Source Current (Body Diode) C) - - 72
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, IS = 18A, VGS = 0V co
trr Reverse Recovery Time - - 500 nS Tj = 25°C, IF = 18A, di/dt S 100A/ys
QRR Reverse Recovery Charge - - 5.3 pC VDD S 50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.0 'C/W
RthJ A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
