IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 VFeatures:The HEXFET transistors also feature all of the well estab- Repetitive Avalanche Ratingsli ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 VPD - 90334F IRF230REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6758HEXFET TRANSISTORS JANTXV2N67 ..
IRF240 ,N-Channel Power MOSFETs/ 18A/ 150-200Vapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF242 ,N-CHANNEL POWER MOSFETapplications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid ..
IS61LV5128-10K , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128-10TI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128-15T , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10BI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10BLI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10K , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IRF230
N-Channel Power MOSFETs/ 9A/ 150V/200V
PD - 90334F
International
IEZR Rectifier IRF230
REPETITIVE AVALANCHEAND dv/dt RATED J AN TX2N67 58
HEXFET®TRANSISTORS JANTXV2N6758
THRU-HOLE (TO-204AA/AE) TlRElF:MlrlL-lPlRF-19500/542l
200V, N-CHANNEL
Product Summary
Part Number anss RDS(on) In
IRF230 200V 0.409 9.0A
The HEXFET®technology is the key to International TO/3
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
. Features:
The HEXFET tranS1stors also feature all of the well estab- u Rep etitiv e Avalanche Ratings
lished advantages of MOSFETs such as voltage control, a Dynamic dv/dt Rating
very fast switching, ease of paralleling and temperature a Hermetically Seale d
stability of the electrical parameters. II Simple Drive Requirements
They are well suited for applications such as switching u Ease ofParalleling
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 9.0
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 6.0 A
IDM Pulsed Drain Current C) 36
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 54 mJ
IAR Avalanche Current Cf) 9.0 A
EAR Repetitive Avalanche Energy co 7.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRF230 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.29 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.40 n VGS = 10V, ID =6.0AC0
Resistance - - 0.49 VGS =10V, ID =9.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 3.0 - - S (U) VDS > 15V, IDS --SOA©
IDSS Zero Gate Voltage Drain Current - - 25 VDs=16OV,VGs=OV
- - 250 HA VDS =160V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGS =20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS =-20V
Qg Total Gate Charge 16 - 39 V68 =10V, ID= 9.0A
Qgs Gate-to-Source Charge 3.0 - 5.7 nC VDS =100V
Qgd Gate-to-Drain ('Miller') Charge 8.0 - 20
td(on) Turn-On Delay Time - - 3 5 VDD =100V, ID =9.0A,
tr Rise Time - - 80 RG =7.5f2
tti(om Turn-Off Delay Time - - 60 ns
tf Fall Time - - 40
LS + LD Total Inductance - 6.1 - nH Measured from the center of
drain pad to center of source
Ciss Input Capacitance - 600 VGS = 0V, VDS =25V
Cogs Output Capacitance - 250 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 80 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 9.0 A
ISM Pulse Source Current (Body Diode) C) - - 36
VSD Diode Forward Voltage - - 1.4 V Tj = 25°C, Is =9.0A, VGS = 0V co
trr Reverse Recovery Time - - 500 nS Tj = 25°C, IF = 9.0A, di/dt SlOOA/us
QRR Reverse Recovery Charge - - 6.0 pc VDD S50V co
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.67 °C/W
Rth J A J unction to Ambient - - 30 Typical socket mount
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