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IRF2204S
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94502
c: l . fi AUTOMOTIVE MOSFET RF2204S
TOR ech I e r
Typical Applications RF2204 L
. Electric Power Steering HEXFET Power MOSFET
o 14 Volts Automotive Electrical Systems D
Features VDSS = 40V
. Advanced Process Technology _
. Ultra Lew .otRfsl.stance "E RDS(on) = 3.6mQ
. Dynamic dv/dt Rating G
o 175°C Operating Temperature
. Fast Switching s ID = 170A©
o Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed forAutomotive applications, this HEXFETO
Power MOSFET utilizes the lastest processing techniques to 4it
achieve extremely low on-resistance persilicon area. Additional ,9 \
features to this design are a 175°Cjunction operating temperature, 'x, N,
fast switching speed and improved repetitive avalanche rating. '
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications D2Pak TO-262
and a wide variety of other applications. IRF2204S IRF2204L
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 170©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120© A
IDM Pulsed Drain Current C) 850
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage d: 20 V
EAS Single Pulse Avalanche Energy© 460 mJ
IAR Avalanche CurrentC0 See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75 o C NV
ReJA Junction-to-Ambient - 40
1
07/01/02
|RF2204S/IRF2204L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.041 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 3.0 3.6 m9 Was = 10V, ID = 130A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 120 - - S Vos = 10V, ID = 130A
loss Drain-to-Source Leakage Current - - 20 pA Ws = 40V, VGS = 0V
- - 250 Vros = 32V, VGs = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
% Total Gate Charge - 130 200 ID = 130A
Qgs Gate-to-Source Charge - 35 52 nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 39 59 VGS = 10V©
tuom Turn-On Delay Time - 15 - VDD = 20V
tr Rise Time - 140 - ns In = 130A
td(off) Turn-Off Delay Time - 62 - Rs = 2.59
t, Fall Time - 110 - VGs = 10V G)
u, Internal Drain Inductance - 4.5 - Between Igad, D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5890 - VGS = 0V
Coss Output Capacitance - 1570 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 8000 - VGs = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1370 - Vss = 0V, Vros = 32V, f = 1.0MH2
Coss eff. Effective Output Capacitance S - 2380 - VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 170© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 850 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 130A, VGS = 0V ©
trr Reverse Recovery Time - 68 100 ns To = 25°C, IF = 130A
Qrr Reverse RecoveryCharge - 120 180 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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