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IRF2204
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
AUTOMOTIVE MOSFET
PD - 94434
IRF2204
Typical Applications HEXFET© Power MOSFET
0 Electric Power Steering
o 14 Volts Automotive Electrical Systems D
VDSS = 40V
Feitclijres d P T h I
o vance rocess ec no ogy -
o Ultra Low On-Resistance G FN, Rroson) - 3.6mQ
o Dynamic dv/dt Rating
o 175°C Operating Temperature ID = 21 O/Wi)
o Fast Switching S
o Repetitive Avalanche Allowed up to Tjmax
Description
SpeciMallydesigned forAutomotive applications, this HEXFET® PowerMOSFET " (igaiiir
utilizes the lastest processing techniques to achieve extremely low on-resistance \f‘l
per silicon area. Additional features ofthis design are a 175°C junction operating _ _ \
temperature, fast switching speed and improved repetitive avalanche rating. \~
These features combine to make this design an extremely effIcient and reliable
device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 210©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 150© A
IDM Pulsed Drain Current co 850
PD @Tc = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 Wl°C
VGS Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy© 460 mJ
IAR Avalanche CurrentCD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
TJ Operating Junction and -55 to + 175 'C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
1
08/07/02
IRF2204
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, lo = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.041 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 3.0 3.6 mn Vss = 10V, ID = 130A (E)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V I/os = 10V, ID = 250pA
gfs Forward Transconductance 120 - - S Vos = 10V, ID = 130A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, VGS = 0V
- - 250 Vros = 32V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 200 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
% Total Gate Charge - 130 200 ID = 130A
095 Gate-to-Source Charge - 35 52 n0 Vos = 32V
di Gate-to-Drain ("Miller") Charge - 39 59 VGS = 10V©
tum) Turn-On Delay Time - 15 - VDD = 20V
t, Rise Time - 140 - ns ID = 130A
tum) Turn-Off Delay Time - 62 - Rs = 2.59
tf Fall Time - 110 - Vss = 10V co
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5890 - VGS = 0V
Cass Output Capacitance - 1570 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 8000 - l/ss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1370 - VGs = 0V, Ws = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 2380 - VGS = 0V, Vos = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 210© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 850 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V To = 25°C, Is = 130A, VGS = 0V ©
trr Reverse Recovery Time - 68 100 ns To = 25°C, IF = 130A
Qrr Reverse RecoveryCharge - 120 180 nC di/dt = 100Alps (D
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+LD)
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