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IRF1902TRPBF
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95496
International
TOR Rectifier IRF1902PbF
Available in Tape & Reel
Lead-Free
HEXFETO Power MOSFET
o Ultra Low On-Resistance Voss RDS(on) max (mf2) ID
0 N-Channel MOSFET 20V 85@VGS = 4.5V 4.0A
: Surface Mount 170@VGS = 2.7V 3.2A
Description
These N-Channel HEXFET© power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This beneht provides the designer
with an extremely efficient device for use in battery
and load management applications..
7-rnIID
6:11:13
The SO-8 has been modified through a customized Top View
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. VWththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGs @ 4.5V 4.2
ID @ TA-- 70°C Continuous Drain Current, VGS © 4.5V 3.4 A
IDM Pulsed Drain Current (D 17
PD @TA = 25°C Power Dissipation © 2.5
Po @TA = 70°C Power Dissipation© 1.6
Linear Derating Factor 0.02 mW/°C
VGS Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RQJA Junction-to-Ambient © - 50 °C/W
1
8/10/04
IRF1902PbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, lo = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.019 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 85 mg N/ss = 4.5V, lo = 4.0A ©
- - 170 N/ss = 2.7V, ID = 3.2A ©
VGS(th) Gate Threshold Voltage 0.70 - - V Vros = VGs, ID = 250pA
gfs Forward Transconductance 5.6 - - S Vos = 10V, ID = 4.0A
. - - 1.0 Vos =16V,VGS = OV
I Drain-to-Source Leaka e Current
DSS g - - 25 PA Vros = 16V, VGS = OV, T J = 70°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -12V
09 Total Gate Charge - 5.0 7.5 lo = 4.2A
Qgs Gate-to-Source Charge - 1.2 - nC Vros = 10V
di Gate-to-Drain ("Miller") Charge - 1.8 - VGS = 4.5V
tam) Turn-On Delay Time - 5.9 - VDD = 10V ©
tr Rise Time - 13 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 23 - Rs = 539
tr Fall Time - 19 - VGS = 4.5V
Ciss Input Capacitance - 310 - VGS = 0V
Cogs Output Capacitance - 130 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 55 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 4 2 MOSFET symbol D
(Body Diode) - - . showing the
ISM Pulsed Source Current 17 integral reverse G
(Body Diode) (D - - p-n junction diode. s
I/so Diode Forward Voltage - - 1.2 V To = 25°C, Is = 2.5A, VGs = 0V ©
trr Reverse Recovery Time - 38 57 ns To = 25°C, IF = 2.5A
Qrr Reverse Recovery Charge - 42 63 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by (3 Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle 3 2%.
2
