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IRF1607
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD -94158
IRF'1607
HEXFET© Power MOSFET
International
Tait RECTIHGF AUTOMOTIVE MOSFET
Typical Applications
. 42 Volts Automotive Electrical Systems
. Electrical Power Steering (EPS) D
o Integrated Starter Alternator
Benefits
. Ultra Low On-Resistance . A
Dynamic dv/dt Rating G
175°C Operating Temperature
Fast Switching s
Repetitive Avalanche Allowed up to Tjmax
. Automotive [0101] Qualified
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs l Ck'';,.
utilizes the lastest processing techniques to achieve
extremely low on-resistance persilicon area. Additional "s..
features of this HEXFET power MOSFET are a 175°C K... _ "
junction operating temperature, fast switching speed ."'
and improved repetitive avalanche rating. These benehts
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
VDSS = 75V
RDS(on) = 0.0075Q
ID = 142A©
TO-220AB
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 1426)
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 100© A
IDM Pulsed Drain Current OD 570
Pro @Tc = 25°C Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy© 1250 mJ
IAR Avalanche Current0) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 5.2 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Case - 0.40
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
1
9/4/01
IRF1607 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.086 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 0.00580.0075 n VGS = 10V, ID = 85A ©
VGSith) Gate Threshold Voltage 2.0 - 4.0 V VDs = 10V, ID = 250pA
Ts Forward Transconductance 79 - - S Vos = 25V, ID = 85A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, VGS = 0V
- - 250 Vos = 60V, N/ss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Qg Total Gate Charge - 210 320 ID = 85A
Qgs Gate-to-Source Charge - 45 68 n0 Vos = 60V
di Gate-to-Drain ("Miller") Charge - 73 110 VGS = 10V
tdwn) Turn-On Delay Time - 22 - VDD = 38V
t, Rise Time - 130 - ns ID = 85A
td(off) Turn-Off Delay Time - 84 - Rs = 1.89
tt Fall Time - 86 - Vss = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) iii) )
from package G
Ls Intemal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 7750 - VGS = 0V
Cass Output Capacitance - 1230 - pF I/rss = 25V
Crss Reverse Transfer Capacitance - 310 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 5770 - VGS = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 790 - VGS = ov, Vos = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance 6) - 1420 - VGs = 0V, Vos = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 142© A showing the
ISM Pulsed Source Current - - 570 integral reverse G
(Body Diode) (O p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 85A, VGS = 0V (4C)
trr Reverse Recovery Time - 130 200 ns To = 25°C, IF = 85A
Qrr Reverse RecoveryCharge - 690 1040 nC di/dt = 100/Ups Ci)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by s Coss eff. is a flxed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as C while V is risin from 0 to 80°/ V .
© Starting T J = 25°C, L = 0.21mH DSS DS g o DSS
Rs = 25f2, 'As = 85A, Vcs=10V (See Figure 12). © Calculated continuous current based on maximum allowable
© Iso f 85A, di/dt g 310A/ps, VDD s V(BR)DSS: junction temperature. Package limitation current is 75A.
Trs 175°C © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
© Pulse width I 400ps; duty cycle 5 2%. avalanche performance.
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