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IRF1503L-IRF1503S
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD - 94494A
Tait 'Uctifier RF1503S
Typical Applications HEXFET® Power MOSFET
. 14V Automotive Electrical Systems
. 14V Electronic Power Steering D
VDSS = 30V
Bengits d P T h I
o vance rocess ec no ogy
. Ultra Low On-Resistance G " RDS(on) = 3.3mf2
. 175°C OperatingTemperature
. Fast Switching ID = 75A
. Repetitive Avalanche Allowed up to Tjmax S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET6 Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in Automotive D2Pak TO-262
applications and a wide variety of other applications. IRF1503S IRF1503L
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 190
ID @ To = 100°C Continuous Drain Current, l/tss @ 10V (See Fig.9) 130 A
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Package limited) 75
IBM Pulsed Drain Current G) 960
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 510 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value© 980
IAR Avalanche Current0D See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
Ras Junction-to-Ambient - 62
1
12/11/02
llRF1503S/lRF1503L
International
TOR Rectifier
Electrical Characteristics © TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.028 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.6 3.3 mn Vss = 10V, ID = 140A (0
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 75 - - S Vos = 25V, ID = 140A
Koss Drain-to-Source Leakage Current - - 20 PA Vos = 30V, VGS = 0V
- - 250 Vos = 24V, Vss = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 200 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
% Total Gate Charge - 130 200 ID = 140A
As Gate-to-Source Charge - 36 54 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 41 62 V65 = 10V©
tdwn) Turn-On Delay Time - 17 - l/oo = 15V
t, Rise Time - 130 - ns ID = 140A
td(oit) Turn-Off Delay Time - 59 - Rs = 2.59
If Fall Time - 48 - Vss = 10V (0
u, Internal Drain Inductance - 5.0 - Between lead, D
nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 13 - .
and center of die contact s
Ciss Input Capacitance - 5730 - Vss = 0V
Coss Output Capacitance - 2250 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 290 - f = 1.0MHz, See Fig. 5
C055 Output Capacitance - 7580 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 2290 - I/ss = 0V, Vos = 24V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 3420 - Veg = 0V, Vos = 0V to 24V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 190© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 960 p-n junction diode. s
l/so Diode Forward Voltage - - 1.3 V To = 25°C, IS = 140A, VGS = 0V ©
in Reverse Recovery Time - 71 110 ns TJ = 25°C, IF = 140A
Qrr Reverse RecoveryCharge - 110 170 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
C) Starting Tu = 25°C, L = 0.049mH
Rs = 259, MS = 140A. (See Figure 12).
© ISD S 140A, di/dt f 110A/ps, VDD f V(BR)DSSI
TJS1750C
© Pulse width s: 400ps; duty cycle s: 2%.
s Cass eff. is a fixed capacitance that gives the same charging time
as Cass while VDS is rising from 0 to 80% Voss .
avalanche performance.
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
