IRF150 ,N-Channel Power MOSFETs/ 40 A/ 60 V/100 VPD - 90337GREPETITIVE AVALANCHE AND dv/dt RATED IRF150HEXFET TRANSISTORS JANTX2N6764THRU-HOLE (TO- ..
IRF1503 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
IRF1503L ,30V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplicationsHEXFET Power MOSFET● 14V Automotive Electrical SystemsD● 14V Electronic Power SteeringV ..
IRF1503S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1607 ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1902 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 94282AIRF1902®HEXFET Power MOSFET Ultra Low On-ResistanceV R max (mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) ..
IS61LV3216-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-10T , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-15T , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-20T , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF150
N-Channel Power MOSFETs/ 38A/ 60V/100V
. I PD-90337G
Internaticna
TOR, Rectifier
REPETI11VE AVALANCHEAND dvldt RATED IRF1 50
HEXFET®TRANSISTORS JANTX2N6764
THRU-HOLE (TO-204AA/AE) JANTXV2N6764
[REF:MIL-PRF-1 95OOI543]
1 00V, N-CHANNEL
Product Summary
Part Number Bvoss RDS(on) ID
IRF150 100V 0.0559 38A
The HEXFET®technology is the key to International
Rectifler's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab- F e atu r e S.
lished advantages of MOSFETs such as voltage control, . . . .
very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings
stability of the electrical parameters. " Dynamlc dv/dt Rating
Th II it d f li ti h it hi n Hermetically Sealed
ey are we su1et or atppl Ic_a IOI'r'ItS such as SWI C :19 n Simple Drive Requirements
powersupp les, mo or con ro s, me ers, c oppers, au lo a Ease ofParalleling
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 38
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 24 A
I D M Pulsed Drain Current C) 152
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/''C
vas Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 150 ml
IAR Avalanche Current co 38 A
EAR Repetitive Avalanche Energy co 15 ml
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
For footnotes refer to the last page
1
08/21/01
IRF150 International
TOR Rectifier
Electrical Characteristics @Tl = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.13 - V/°C Reference to 25°C, t = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.055 f2 VGS = 10V, ID =24A©
Resistance - - 0.065 VGS =10V, ID =38A CI)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, I D =250pA
gfs Forward Transconductance 9.0 - - S (U) VDS > 15V, IDS =24A©
IDSS Zero Gate Voltage Drain Current - - 25 VDS=80V, VGs=0V
- - 250 HA vDs =80V
VGS = 0V, TJ = 125°C
tzas Gate-to-Source Leakage Forward - - 100 n A VGS =20V
less Gate-to-Source Leakage Reverse - - -100 VGS =-20V
09 Total Gate Charge 50 - 125 VGS =10V, ID: 38A
Qgs Gate-to-Source Charge 8.0 - 22 n0 VDS =50V
Qgd Gate-to-Drain ('Miller') Charge 25 - 65
td(on) Turn-On Delay Time - - 35 VDD =50V, ID =38A,
tr Rise Time - - 190 ns VGS =10V, RG =2.35Q
td(off) Turn-Off Delay Time - - 170
tt FalITime - - 130
LS + LD Total Inductance - 6.1 - nH Measured from the center of
drain pad to center of source
Ciss Input Capacitance - 3700 VGS = 0V, VDs =25V
Cogs OutputCapacitance - 1100 - pF t= 1.0MHz
Crss Reverse Transfer Capacitance - 200 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 38 A
ISM Pulse Source Current (Body Diode) co - - 152
VSD Diode Forward Voltage - - 1.9 V T] = 25°C, ls =38A, VGS = 0V ©
trr Reverse Recovery Time - - 500 rt Tj = 25°C, IF = 38A, di/dt S100A/us
QRR Reverse Recovery Charge - - 2.9 pc VDD 5 30V ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 0.83 "C/W
RthJA Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
