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IRF1407S
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD -94335
lRF1407S
IRF1407L
HEXFET© Power MOSFET
International
TOR Rectifier
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
o Repetitive Avalanche Allowed up to Tjmax
Description G
Advanced HEXFETO Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, s
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efeent
and reliable device for use in awide variety ofapplications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
VDSS = 75V
A RDS(on) = 0.0078Q
ID = 100A©
resistance end_can dissipate up to 2.0W in a typical surface D2Pak TO-262
mount application. . . . IRF1407S IRF1407L
The through-hole version (IRF1407L) IS available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10VO100©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V© 70© A
IDM Pulsed Drain Current COO) 520
PD @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy©© 390 m]
IAR Avalanche CurrentC) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt ©© 4.6 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 0.75 'C/W
ReJA Junction-to-Ambient(PCB Mounted,steady-state ** - 40
"When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
10/05/01
IRF1407S/lRF1407L.
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.09 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.0078 Q Was = 10V, ID = 78A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 74 - - S Vos = 25V, ID = 78A
loss Drain-to-Source Leakage Current - - 20 pA Ws = 75V, VGS = 0V
- - 250 Ws = 60V, VGs = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Q, Total Gate Charge - 160 250 ID = 78A
Qgs Gate-to-Source Charge - 35 52 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 54 81 VGS = 10V®0
tuom Turn-On Delay Time - 11 - VDD = 38V
tr Rise Time - 150 - ns In = 78A
td(off) Turn-Off Delay Time - 150 - Rs = 2.59
t, Fall Time - 140 - VGS = 10V ©©
u, Internal Drain Inductance - 4.5 - Between Isad, D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5600 - VGS = 0V
Coss Output Capacitance - 890 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 190 - f = 1.0KHz, See Fig. 5
Coss Output Capacitance - 5800 - VGs = 0V, Vos = 1.0V, f = 1.0KHz
Coss Output Capacitance - 560 - Vss = 0V, Vros = 60V, f = 1.0KHz
Coss eff. Effective Output Capacitance S - 1100 - I/ss = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1006) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 520 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 78A, VGS = 0V ©
trr Reverse Recovery Time - 110 170 ns TJ = 25°C, IF = 78A
Qrr Reverse RecoveryCharge - 390 590 no di/dt = 100Alps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting Tu = 25°C, L = 0.13mH
Rs = 259, IAS = 78A. (See Figure 12).
© Iso S 78A, di/dt S 320A/ps, VDD S V(BR)DSS!
T J f 175°C
© Pulse width S 400ps; duty cycle S 2%.
s Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
C) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Uses IRF1407 data and test conditions.
