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IRF1407PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Typical Applications
PD - 95485A
|RF1407PbF
. Industrial Motor Drive HEXFET® Power MOSFET
Benefits VDSS = 75V
. Advanced Process Technology
. Ultra Low On-Resistance
. Dynamic dv/dt Rating RDS(on) = 0.00789
. 175°C Operating Temperature
. Fast Switching ID = 130A©
o Repetitive Avalanche Allowed up to Tjmax
Description
This Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vss @ 10V 130©
ID © To = 100°C Continuous Drain Current, Vss © 10V 92© A
IDM Pulsed Drain Current (D 520
PD @Tc = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
Vas Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy© 390 mJ
IAR Avalanche CurrentCD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 4.6 V/ns
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
1
07/14/10
IRF1407PbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.09 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.0078 Q Vss = 10V, ID = 78A (0
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 74 - - S Vos = 25V, ID = 78A
loss Drain-to-Source Leakage Current - - 20 pA Vros = 75V, l/ss = 0V
- - 250 Vos = 60V, I/as = 0V, Tu = 150°C
lass Gate-to-Source Forward Leakage - - 200 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -2OO VGS = -20V
% Total Gate Charge - 160 250 ID = 78A
Qgs Gate-to-Source Charge - 35 52 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 54 81 Vss = 10V©
tdwn) Turn-On Delay Time ._- 11 -- VDD = 38V
tr Rise Time - 150 - ns ID = 78A
td(ott) Turn-Off Delay Time - 150 - Rs = 2.59
if Fall Time - 140 - VGS =10V ©
u, Internal Drain Inductance - 4.5 - Between Pd: D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance __- 7.5 --.- .
and center of die contact s
Ciss Input Capacitance - 5600 - Ves = 0V
CDSS Output Capacitance - 890 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 190 - f = 1.0KHz, See Fig. 5
Coss Output Capacitance - 5800 - Vss = 0V, Vos = 1.0V, f = 1.0KHz
Cogs Output Capacitance - 560 - Vss = 0V, VDs = 60V, f = 1.0KHz
Coss eff. Effective Output Capacitance s - 1100 - Ves = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 130© A showing the
ISM Pulsed Source Current integral reverse 5
(Body Diode) co - - 520 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TI, = 25°C, ls = 78A, Vas = 0V (0
trr Reverse Recovery Time - 110 170 ns Tu = 25°C, IF = 78A
Qrr Reverse RecoveryCharge - 390 590 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by s Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
© Starting TJ = 25°C, L = 0.13mH
Rs = 259, IAS = 78A. (See Figure 12).
© Iso S 78A, di/dt S 320A/ps, VDD S V(BR)DSSI
as Coss while Vos is rising from 0 to 80% Voss .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
TJ f 175°C co Limited by TJmaX , see Fig.12a, 12b, 15, 16 for typical repetitive
© Pulse width S 400ps; duty cycle S 2%. avalanche performance.
