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IRF1407
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 93907
International
Tart Rectifier AUTOMOTIVE MOSFET I RFI 407
Typical Applications HEXFET© Power MOSFET
q Integrated Starter Alternator
o 42 Volts Automotive Electrical Systems D
VDSS = 75V
Beggfits d P T h I
o vance rocess ec no ogy -
o Ultra Low On-Resistance G ‘ " RDS(On) - 000789
o Dynamic dv/dt Rating
q 175°C Operating Temperature ID = 130A©
o Fast Switching S
o Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the lastest processing '
techniques to achieve extremely low on-resistance per silicon area.
Additional features ofthis HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combineto make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 130©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 92© A
IDM Pulsed Drain Current (D 520
PD @Tc = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy© 390 mJ
IAR Avalanche Current0) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 4.6 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
1
10/11/01
IRF1407
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGs = 0V, lo = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.09 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.0078 n Vss = 10V, ID = 78A GD
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V I/os = 10V, ID = 250pA
gfs Forward Transconductance 74 - - S Vos = 25V, ID = 78A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, VGS = 0V
- - 250 VDs = 60V, VGs = OV, Tu = 150°C
less Gate-to-Source Forward Leakage - - 200 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
% Total Gate Charge - 160 250 ID = 78A
095 Gate-to-Source Charge - 35 52 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 54 81 VGS = ION/OD
tam) Turn-On Delay Time - 11 - VDD = 38V
t, Rise Time - 150 - ns ID = 78A
tum) Turn-Off Delay Time - 150 - Rs = 2.59
tf Fall Time - 140 - l/ss = 10V ©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5600 - VGS = 0V
Cass Output Capacitance - 890 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 190 - f = 1.0KHz, See Fig. 5
Coss Output Capacitance - 5800 - VGs = 0V, VDs = 1.0V, f = 1.0KHz
Coss Output Capacitance - 560 - VGs = 0V, Ws = 60V, f = 1.0KHz
Coss eff. Effective Output Capacitance s - 1100 - VGS = 0V, Vos = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 130© A showing the
ISM Pulsed Source Current - - 520 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 78A, VGS = 0V CO
trr Reverse Recovery Time - 110 170 ns TJ = 25°C, IF = 78A
Qrr Reverse RecoveryCharge - 390 590 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max.junction temperature. (See fig. 11).
© Starting To = 25°C, L = 0.13mH
Rs = 259, IAS-- 78A. (See Figure 12).
© Iso f 78A, di/dt S 320A/ps, VDD S V(BR)oss,
s Coss eff. is a foasd capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
TJ 3 175°C © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
© Pulse width f 400ps; duty cycle f 2%.
avalanche performance.
