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IRF1405ZS
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94645A
International IRF1405Z
TOR Rectifier AUTOMOTIVE MOSFET IRF1405ZS
IRF1405ZL
HEXFET© Power MOSFET
Features
. Advanced Process Technology D
Ultra LowOn-Resistance VDSS = 55V
175°C Operating Temperature
Fast Switching . rx, =
Repetitive Avalanche Allowed up to Tjmax G RDS(on) 4.9mQ
Description s ID 75A
Specifically designed forAutomotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additionalfeatures
of this design are a 175°C junction operating G'
temperature, fast switching speed and improved 3
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications T0-220AB D2Pak TO-262
and a wide variety of other applications. IRF1405Z IRF1405ZS IRF1405ZL
Absolute Maximum Ratings
Parameter Max. Units
'0 @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 150
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 110 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IBM Pulsed Drain Current co 600
PD @Tc = 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage 1 20 V
EAS
EAS (Tested ) Single Pulse Avalanche Energy Tested Value co 420
IAR Avalanche Current (O See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.65
Rocs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
ROJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 40
HEXFET® is a registered trademark of International Rectifier.
1
08/29/03
05Z/S/L
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.049 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.7 4.9 m9 VGS = 10V, ID = 75A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 v Vos = VGS, ID = 250pA
gfs Forward Transconductance 88 - - S I/os = 25V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 55V, Vss = 0V
- - 250 Vos = 55V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Qg Total Gate Charge - 120 180 ID = 75A
Qgs Gate-to-Source Charge - 31 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 46 - I/ss = 10V ©
td(on) Turn-On Delay Time - 18 - VDD = 25V
t, Rise Time - 110 - ID = 75A
td(om Turn-Off Delay Time - 48 - ns RG = 4.49
t, Fall Time - 82 - I/ss = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 4780 - I/ss = 0V
Cass Output Capacitance - 770 - Vos = 25V
Crss Reverse Transfer Capacitance - 410 - pF f = 1.0MHz
C055 Output Capacitance - 2730 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 600 - VGS = 0V, Vos = 44V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 910 - I/ss = 0V, Vros = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 600 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 75A, VGs = 0V ©
trr Reverse Recovery Time - 30 46 ns To = 25°C, IF = 75A, VDD = 25V
Qrr Reverse Recovery Charge - 30 45 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive ra
ting; pulse width limited by
max. junction temperature. (See ftg. 11).
© Limited by TJmax, starting TJ = 25°C, L = 0.10mH
Rs = 2552, IAS = 75A, I/ss =10V. Part not
recommended for use above this value.
© Pulse width I 1.0ms; duty cycle I 2%.
© Coss eff. is a
fixed capacitance that gives the same
charging time as Coss while Vos is rising from 0 to 80%
Voss .
http://www.da
tasheetcataloa.Com/
Limited by TJmax , see Fig.12a, 12b, 15, 16 tor typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
