IRF1405ZPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.IRF1405ZPbFIRF1405ZSPbF IRF1405ZLPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T ..
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IRF1405ZPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 97018A
International IRF14052PbF
TOR Rectifier IRF1405ZSPbF
Features llRF1405ZLPbF
. Advanced Process Technology HEXFET+ Power MOSFET
. Ultra Low On-Resistance D
. 175°C OperatingTemperature -
. Fast Switching VDSS - 55V
q Repetitive Avalanche Allowed up to Tjmax
o Lead-Free ' rn RDS(on) = 4.9mf2
Description s ID = 75A
This HEXFETO Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additionalfeatures
of this design are a 175°C junction operating ', ',agi.tt sgit,
temperature, fast switching speed and improved \‘Q’v R,e',
repetitiveavalancherating.Thesefeaturescombine ‘\\" . V1
to make this design an extremely efficient and .' l,
reliable device for use in a wide variety of
applications. TO-220AB D2Pak TO-262
IRF1405ZPbF lRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas © 10V (Silicon Limited) 150
ID © To = 100°C Continuous Drain Current, Vss © 10V 110 A
ID © To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 75
IBM Pulsed Drain Current CO 600
PD @TC = 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage t 20 V
EA$
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 420
IAR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibfoin (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case -- 0.65
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CAN
ReJA Junction-to-Ambient - 62
ReJA Junction-to-Ambient (PCB Mount, steady state)© - 4O
HEXFET® is a registered trademark of International Rectifier.
1
07/14/10
05Z/S/LPbF
International
TOR Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, lo = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.049 -- VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.7 4.9 mn Vss = 10V, ID = 75A ©
VGth) Gate Threshold Voltage 2.0 - 4.0 v I/os = Vas, ID = 250pA
gfs Forward Transconductance 88 - - S Vos = 25V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 uA Vrrs = 55V, Vss = 0V
-- -- 250 Vos = 55V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Qg Total Gate Charge - 120 180 ID = 75A
Qgs Gate-to-Source Charge - 31 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge -- 46 -- Ves = 10V ©
td(on) Turn-On Delay Time - 18 - VDD = 25V
t, Rise Time - 110 - ID = 75A
tum) Turn-Off Delay Time - 48 - ns Ra = 4.49
t, Fall Time - 82 - Vss = 10V ©
Lo Internal Drain Inductance -- 4.5 -- Between lead, 2 D
nH 6mm (0.25in.) i"] l
Ls Internal Source Inductance - 7.5 - from package GXLE—Z
and center of die contact s
Ciss Input Capacitance - 4780 - Vss = 0V
Coss Output Capacitance -- 770 -- Vos = 25V
Crss Reverse Transfer Capacitance - 410 - pF f = 1.0MHz
Coss Output Capacitance - 2730 - Vas = OV, l/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 600 - Vss = 0V, VDS = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 910 - Vss = 0V, VDS = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current --.- - 600 integral reverse G
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 75A, Vss = 0V ©
trr Reverse Recovery Time - 30 46 ns TJ = 25°C, IF = 75A, VDD = 25V
Qrr Reverse Recovery Charge -- 30 45 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
co Limited by TJmax, starting TJ = 25°C, L = 0.10mH
Rs = 259, lAs = 75A, VGS =1OV. Part not
recommended for use above this value.
© Pulse width S 1.0ms; duty cycle S 2%.
© Cass eff. is a fixed capacitance that gives the same
charging time as COSS while Vos is rising from 0 to 80%
VDSS .
http://www.da
tasheetcataloa.Com/
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
© This value determined from sample failure population.
100% tested to this value in production.
Cr) This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
