IRF1405STRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1405ZPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.IRF1405ZPbFIRF1405ZSPbF IRF1405ZLPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T ..
IRF1405ZS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C 150Continuous Drain Current, ..
IRF1405ZS-7P ,55V Single N-Channel HEXFET Power MOSFET in a 7-Lead D2-Pak packageapplications.Standard PackBase part number Package Type Orderable Part Number NoteForm QuantityIRF1 ..
IRF1407 ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1407PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
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IRF1405STRLPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD-95331A
IRF1405SPbF
IRF1405LPbF
International
TOR Rectifier
Typical Applications HEXFET® Power MOSFET
q Industrial Motor Drive
Benefits DSS" 55
Advanced Process Technology RDS(on)=
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
=5.3mf2
|D=131A©
Description
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremelylow on-resistance persilicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed 2
and improved repetitive avalanche rating. These D Pak
benefits combine to make this design an extremely IRF1405SPbF
TO-262
IRF1405LPbF
efficient and reliable device for use in a wide variety
of applications.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas © 10V 131©
ID @ To = 100°C Continuous Drain Current, I/ss © 10V 93© A
IDM Pulsed Drain Current © 680
PD ©Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vas Gate-to-Source Voltage t 20 V
EAs Single Pulse Avalanche Energy© 590 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.75 °C/W
RQJA Junction-to-Ambient (PCB mount)© - 40
1
07/14/10
IRF1405S/LPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250PA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 4.6 5.3 mn Vas = 10V, ID = 101A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250PA
gfs Forward Transconductance 69 - - S Vos = 25V, ID = 110A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 55V, Vss = 0V
- - 250 Vos = 44V, l/ss = 0V, T, = 150°C
less Gate-to-Source Forward Leakage - - 200 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Qg Total Gate Charge - 170 260 ID = 101A
ths Gate-to-Source Charge - 44 66 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 62 93 Vas = 101/©
td(on) Turn-On Delay Time - 13 - l/oo = 38V
t, Rise Time - 190 - ns ID = 110A
td(oit) Turn-Off Delay Time -- 130 - Re = 1.19
if Fall Time - 110 - Vas =10V ©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5480 - Vss = 0V
Coss Output Capacitance - 1210 - pF Vos = 25V
Crs,S Reverse Transfer Capacitance - 280 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 5210 - Vas = 0V, VDs = 1.0V, f = 1.0MHz
Cass Output Capacitance - 900 - VGS = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1500 - l/ss = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 131© A showing the
ISM Pulsed Source Current - - 680 integral reverse G
(Body Diode) CD p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 101A, Vss = 0V (4)
trr Reverse Recovery Time - 88 130 ns TJ = 25°C, IF = 101A
Qrr Reverse RecoveryCharge - 250 380 nC di/dt = 1OOA/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
