IRF1405S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagefeatures of this HEXFET power MOSFET are a 175°C 2D Pak TO-262junction operating temperature, fast ..
IRF1405S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplications®HEXFET Power MOSFETO Electric Power Steering (EPS)O Anti-lock Braking System (ABS)DO W ..
IRF1405STRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1405ZPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.IRF1405ZPbFIRF1405ZSPbF IRF1405ZLPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T ..
IRF1405ZS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C 150Continuous Drain Current, ..
IRF1405ZS-7P ,55V Single N-Channel HEXFET Power MOSFET in a 7-Lead D2-Pak packageapplications.Standard PackBase part number Package Type Orderable Part Number NoteForm QuantityIRF1 ..
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-10T , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF1405L-IRF1405S
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR liuctifier
Typical Applications
Electric Power Steering (EPS)
Anti-Iock Braking System (ABS)
Wiper Control
Climate Control
Power Door
enefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
o Repetitive Avalanche Allowed up to Tjmax
Description
Stripe Planar design of HEXFETD Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance persilicon area. Additional
AUTOMOTIVE MOSFET
PD -93992A
IRF1405S
IRF1405L
HEXFET® Power MOSFET
V053: 55V
|D=131A©
features of this HEXFET power MOSFET are a 175°C D2Pak TO-262
junction operating temperature, fast switching speed IRF1405S IRF1405L
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V 131 ©
ID © To = 100°C Continuous Drain Current, Vss @ 10V 93© A
IDM Pulsed Drain Current C) 680
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vas Gate-to-Source Voltage t 20 V
EAs Single Pulse Avalanche Energy© 590 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.75 °C/W
RQJA Junction-to-Ambient (PCB mount)© - 40
1
12/07/04
IRF1405S/L
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250PA
AV(BR)Ds$/ATJ Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 4.6 5.3 mn Vas = 10V, ID = 101A Ci)
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 69 - - S Vos = 25V, ID = 110A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, Vss = 0V
- - 250 Vos = 44V, l/ss = 0V, To = 150°C
ksss Gate-to-Source Forward Leakage -- -- 200 n A Vai; = 20V
Gate-to-Source Reverse Leakage - - -2OO Vss = -20V
q, Total Gate Charge - 170 260 ID = 101A
As Gate-to-Source Charge - 44 66 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 62 93 Vas = 10V©
td(on) Turn-On Delay Time - 13 - l/oo = 38V
t, Rise Time - 190 - ns ID = 101A
tam) Turn-Off Delay Time .-_- 130 -.-.- Re = 1.19
tt Fall Time - 110 - Vas = 10V ©
Lo Internal Drain Inductance - 4.5 - Between tal D
nH 6mm (0.25m.) Q: )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5480 - Vss = 0V
Coss Output Capacitance - 1210 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 5210 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 900 - VGS = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1500 - Vss = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 131© A showing the
ISM Pulsed Source Current - - 680 integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V To = 25°C, Is = 101A, l/ss = 0V ©
trr Reverse Recovery Time - 88 130 ns To = 25°C, IF = 101A
Qrr Reverse RecoveryCharge - 250 380 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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