IRF1405 ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1405L ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1405PBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications®● Electric Power Steering (EPS)HEXFET Power MOSFET● Anti-lock Braking System (ABS)D● W ..
IRF1405S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagefeatures of this HEXFET power MOSFET are a 175°C 2D Pak TO-262junction operating temperature, fast ..
IRF1405S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplications®HEXFET Power MOSFETO Electric Power Steering (EPS)O Anti-lock Braking System (ABS)DO W ..
IRF1405STRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-10T , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF1405 -IRF1405PBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-93991 C
International
TOR Rectifier
Typical Applications
IRF1 405
Electric Power Steering (EPS)
HEXFET® Power MOSFET
Anti-lock Braking System (ABS)
Wiper Control D
Climate Control
Power Door
enefits - A
Advanced Process Technology G
Ultra Low On-Resistance
Dynamic dv/dt Rating s
175°C Operating Temperature
Fast Switching
o Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFETO Power MOSFETs L'-, 't
utilizes the latest processing techniques to achieve - \:_\\
extremely low on-resistance persilicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
AUTOMOTIVE MOSFET
VDSS = 55V
RDS(on) = 5.3mQ
ID = 169A©
ooooomooooo
and improved repetitive avalanche rating. These benehts TO-220AB
combine to make this design an extremely ethcient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25''C Continuous Drain Current, I/ss @ 10V 169©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 118© A
IDM Pulsed Drain Current C) 680
PD @Tc = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage l 20 V
EAs Single Pulse Avalanche Energy© 560 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.45 "C/W
Recs Case-to-Sink, Flat, Greased Surface 0.50 -
ReJA Junction-to-Ambient - 62
1
8/26/03
|RF1405
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AN/ess/AT: Breakdown Voltage Temp. Coemcient - 0.057 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 4.6 5.3 mn VGs = 10V, ID = 101A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = 10V, ID = 250pA
9ts Forward Transconductance 69 - - S I/rss = 25V, ID = 110A
loss Drain-to-Source Leakage Current - - 20 pA VDS = 55V, Vss = 0V
- - 250 Vos = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Qg Total Gate Charge - 170 260 ID = 101A
Qgs Gate-to-Source Charge - 44 66 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - 62 93 l/ss = ION/CO
td(on) Turn-On Delay Time - 13 - VDD = 38V
t, Rise Time - 190 - ns ID = 110A
td(off) Turn-Off Delay Time - 130 - Rs = 1.19
tf Fall Time - 110 - l/ss = 10V ©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - . -
and center of die contact s
Ciss Input Capacitance - 5480 - l/ss = 0V
Cos, Output Capacitance - 1210 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 5210 - I/ss = 0V, VDs = 1.0V, f = 1.0MHz
Cass Output Capacitance - 900 - VGS = 0V, VDs = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1500 - VGS = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 169© A showing the
ISM Pulsed Source Current - - 680 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 101A, VGS = 0V ©
in Reverse Recovery Time - 88 130 ns T: = 25''C, IF = 101A
Qrr Reverse RecoveryCharge - 250 380 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting To = 25°C, L = 0.11mH
Re: 259, IAS-- 101A. (See Figure 12).
© Iso S 101A, di/dt S 210A/ps, VDDS V(BR)DSS,
TJs175°C
© Pulse width S 400ps; duty cycle S 2%.
© Cass eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
