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IRF1404Z -IRF1404ZS
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International PD-94634A
.3 R tifi AUTOMOTIVE MOSFET IRF1404Z
TOR cc I Ier IRF1404ZS
IRF1404ZL
Features HEXFET© Power MOSFET
. Advanced Process Technology
. Ultra Low On-Resistance D
o 175°C Operating Temperature VDSS = 40V
o Fast Switching
o Repetitive Avalanche Allowed up to TImax G " RDS(on) = 3.7mQ
Description
Specifcally designed for Automotive applications, s ID = 75A
this HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°Cjunction operating tempera- .. r&z ' "
ture, fast switching speed and improved repetitive \Vi.‘ \., xiii
avalanche rating . These features combine to make N, . 'v-. V l,
this design an extremelyettidentand reliable device . l,
for use in Automotive a lications and a wide variet
of other applications. pp y TO-220AB D2Pak TO-262
IRF1404Z IRF1404ZS IRF1404ZL
Absolute Maximum Ratings
Parameter Max. Units
lo @ TC = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 190
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Dram Current LO 750
PD @TC = 25°C Power Dissipation 220 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS (Thermallylimited) Single Pulse Avalanche Energy© 320 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 480
|AR Avalanche Current (D See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy (S) mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw co 10 Ibf-in (1.1Nmo)
Thermal Resistance
Parameter Typ. Max. Units
Rooc Junction-to-Case - 0.65 ''CAN
Recs Case-to-Sink, Flat Greased Surface (D 0.50 -
ROJA Junction-to-Ambient © - 62
ROJA Junction-to-Ambient (PCB Mount) - 40
1
8/28/03
IlRF1404ZS_L
International
IEER Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.033 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.7 3.7 mn VGS = 10V, ID = 75A ©
Vesun) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250PA
gfs Fowvard Transconductance 170 - - V Ws = 25V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, VGS = 0V
- - 250 Vos = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Qg Total Gate Charge - 100 150 ID = 75A
As Gate-to-Source Charge - 31 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 42 - Ves = 10V s
tam) Turn-On Delay Time - 18 - VDD = 20V
tr Rise Time - 110 - ID = 75A
tdom Turn-Off Delay Time - 36 - ns Rs = 3.0 Q
tr Fall Time - 58 - VGS = 10V Cs)
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 4340 - Ves = 0V
Cass Output Capacitance - 1030 - Vos = 25V
Crss Reverse Transfer Capacitance - 550 - pF f = 1.0MHz
Coss Output Capacitance - 3300 - I/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 920 - Vss = 0V, Vos = 32V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 1350 - VGS = 0V, Vos = 0V to 32V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the fir
ISM Pulsed Source Current - - 750 integral reverse e E
(Body Diode) (D p-n junction diode. e
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 75A, VGS = 0V ©
trr Reverse Recovery Time - 28 42 ns T J = 25°C, IF = 75A, I/co = 20V
er Reverse Recovery Charge - 34 51 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
