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IRF1404L-IRF1404S-IRF1404SPBF
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
. Fully Avalanche Rated
Description .
Seventh Generation HEXFET6 Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
PD -93853C
IRF1404S
IRF1404L
HEXFET® Power MOSFET
VDSS = 40V
A RDS(on) = 0.0049
I = 1 2A©
resistance in any existing surface mount package. The D2Pak TO-262
D2Pak is suitable for high current applications because of IRF1404S IRF1404L
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ ION/O) 162©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V© 115© A
IDM Pulsed Drain Current 0D© 650
Pro @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 519 mJ
IAR Avalanche Current0D 95 A
EAR Repetitive Avalanche Energy© 20 m]
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T J Operating Junction and -55 to +175
TSTG Storage Temperature Range -55 to +175 ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rox: Junction-to-Case - 0.75 "CA/ll
ReJA Junction-to-Ambient (PCB mounted, steady-state)* - 40
1
5/18/01
IRF1404S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.036 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.00350.004 C2 VGs = 10V, ID = 95A (E)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gts Forward Transconductance 106 - - S VDs = 25V, ID = 60A©
bss Drain-to-Source Leakage Current - - 20 pA Vros = 40V, VGS = 0V
- - 250 Vos = 32V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Qg Total Gate Charge - 160 200 lo = 95A
095 Gate-to-Source Charge - 35 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 42 60 Vss = 10V Ci)()
tam”) Turn-On Delay Time - 17 - VDD = 20V
tr Rise Time - 140 - ns ID = 95A
td(ott) Turn-Off Delay Time - 72 - Rs = 2.59
if Fall Time - 26 - Ro = 0.219 ©©
Ls Internal Source Inductance - 7.5 _ nH Between lead, .
and center of die contact
Ciss Input Capacitance - 7360 - VGS = 0V
Coss Output Capacitance - 1680 - Vos = 25V
Crss Reverse Transfer Capacitance - 240 - pF f = 1.0MHz, See Fig. 5 ©
Coss Output Capacitance - 6630 - VGs = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1490 - VGS = 0V, Vos = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance SO) - 1540 - VGS = 0V, Vros = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 162© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 650 p-n junction diode. s
I/so Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 95A, VGS = 0V Cr)
trr Reverse Recovery Time - 71 110 ns TJ = 25°C, IF = 95A
Gr Reverse RecoveryCharge - 180 270 nC di/dt = 100/Ups Cod)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting To = 25°C, L = 0.12mH
Rs = 259, IAs = 95A. (See Figure 12)
© ISO f 95A, di/dt S 150A/ps, VDD S V(BR)DSS,
T J f 175°C
GD Pulse width s 300ps; duty cycle S 2%.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
s Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Ws is rising from O to 80% VDss
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
co Use IRF1404 data and test conditions.
For recommended footprint and soldering techniques refer to application note #AN-994.
