IRF1312STRLPBF ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D Motor Control80V 10mΩ 95A Uni ..
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IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
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IRF1312STRLPBF
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Applications High frequency DC-DC convertersV R max IDSS DS(on) D Motor Control80V 10mΩ 95A Uninterrutible Power Supplies Lead-FreeBenefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (SeeOSS2TO-220AB D Pak TO-262 App. Note AN1001)IRF1312 IRF1312S IRF1312L Fully Characterized Avalanche Voltage and CurrentAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 95D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 67 AD C GSI Pulsed Drain Current 380DMP @T = 25°C Power Dissipation 3.8 WD AP @T = 25°C Power Dissipation 210D CLinear Derating Factor 1.4 W/°CV Gate-to-Source Voltage ± 20 VGSdv/dt Peak Diode Recovery dv/dt 5.1 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.75θJCR Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WθCSR Junction-to-Ambient ––– 62θJAR Junction-to-Ambient (PCB mount) ––– 40θJANotesthrough are on page 11 1Downloaded from: http://www.ic-phoenix.com/stock/ Static @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ConditionsV Drain-to-Source Breakdown Voltage 80 ––– ––– V V = 0V, I = 250μA(BR)DSS GS D∆V /∆T Breakdown Voltage Temp. Coefficient ––– 0.078 ––– V/°C Reference to 25°C, I = 1mA(BR)DSS J D R Static Drain-to-Source On-Resistance ––– 6.6 10 mΩ V = 10V, I = 57ADS(on) GS DV Gate Threshold Voltage 3.5 ––– 5.5 V V = V , I = 250μAGS(th) DS GS D––– ––– 1.0 V = 76V, V = 0VDS GSI Drain-to-Source Leakage CurrentμADSS––– ––– 250 V = 64V, V = 0V, T = 150°CDS GS JGate-to-Source Forward Leakage ––– ––– 100 V = 20VGSI nAGSSGate-to-Source Reverse Leakage ––– ––– -100 V = -20VGSDynamic @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units Conditionsg Forward Transconductance 92 ––– ––– S V = 25V, I = 57Afs DS DQ Total Gate Charge ––– 93 140 I = 57Ag DQ Gate-to-Source Charge ––– 36 ––– nC V = 40Vgs DSQ Gate-to-Drain ("Miller") Charge ––– 34 ––– V = 10V, gd GSt Turn-On Delay Time ––– 25 ––– V = 40Vd(on) DDt Rise Time ––– 130 ––– I = 57Ar Dnst Turn-Off Delay Time ––– 47 ––– R = 4.5Ωd(off) Gt Fall Time ––– 51 ––– V = 10Vf GSC Input Capacitance ––– 5450 ––– V = 0Viss GSC Output Capacitance ––– 550 ––– V = 25Voss DSC Reverse Transfer Capacitance ––– 340 ––– pF ƒ = 1.0MHzrssC Output Capacitance ––– 1910 ––– V = 0V, V = 1.0V, ƒ = 1.0MHzoss GS DSC Output Capacitance ––– 380 ––– V = 0V, V = 64V, ƒ = 1.0MHzoss GS DSC eff. Effective Output Capacitance ––– 620 ––– V = 0V, V = 0V to 64V oss GS DSAvalanche CharacteristicsParameter Typ. Max. UnitsE Single Pulse Avalanche Energy ––– 250 mJASI Avalanche Current ––– 57 AARE Repetitive Avalanche Energy ––– 21 mJAR
