IRF1310S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IRF1312 ,80V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IRF1312L ,80V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFET
IRF1312S ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IRF1312S ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFET
IRF1312STRLPBF ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D Motor Control80V 10mΩ 95A Uni ..
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256-8TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF1310S
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
applications because of its low internal connection resistance and candissipate up to 2.0W in a typical surface mount application.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 41D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 29 AD C GSI Pulsed Drain Current 160DMP @T = 25°C Power Dissipation 170D CWP @T = 25°C Power Dissipation (PCB Mount)** 3.8D CLinear Derating Factor 1.1W/°CLinear Derating Factor (PCB Mount)** 0.025V Gate-to-Source Voltage ±20 VGSE Single Pulse Avalanche Energy 230 mJASI Avalanche Current 41 AARE Repetitive Avalanche Energy 17 mJARdv/dt Peak Diode Recovery dv/dt 5.5 V/nsT T Junction and Storage Temperature Range -55 to + 175J, STG°CSoldering Temperature, for 10 seconds 300 (1.6mm from case)Thermal ResistanceParameter Min. Typ. Max. UnitsR Junction-to-Case –––– –––– 0.90θJCR Junction-to-Ambient (PCB Mount)** –––– –––– 40 °C/WθJAR Junction-to-Ambient –––– –––– 62θJA** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.Revision 0IRF1310S
