IRF1310NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationswhtmstiite Maximum Ratings
Parameter Max. Units
ID @ TC _ 25'C Canllnuous Dram Curr ..
IRF1310S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IRF1312 ,80V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IRF1312L ,80V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFET
IRF1312S ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IRF1312S ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFET
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256-8TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF1310NSTRRPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
applicationswhtmstiite Maximum Ratings
Parameter Max. Units
ID @ TC _ 25'C Canllnuous Dram Current, Vs © 10VS 42
ID © Tc -- 100'C Continuous Dram Current, Vss © 10v® 30 A
bs, Pulsed Dram Current COG) 140
Po @TA _ 25"C Power Dissipation 3.5 W
Po ©Ts = 25"C Power Dissipatdn 160 w
Linear Deranng Factor 1.1 wrc
Vss GatertrrSource Vanage t 20 v
E: Single Pulse Avalanche Energy®® 420 m]
k, Ava‘ancha Currenm 22 A
Em Repetitive Avalanche Energy© 15 m]
dvldl Peak Diude Recovery dv/dt SS 5.0 Vlns
T: Operating Junction and -55 to ' 175
Tsm Storage Temperature Range (
Soldering Temperature, rar 10 seconds 300 (1.6mm trom case )
Thermal Resistance
Parameter Typ. Max. Units
ch Junction-tcr-Case i 0.95 .
R4,]; Junthi:m-to-AmNent ( PUB MountitearMstater" - 40 CAN“MW” HEXFET® Power MOSFET
D
Voss =100V
Rum") = 0,0369
ID = 42A
DzPak r0432International
TOR RectifierWmmwnweDem
