IRF1310N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF1310NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR RectifierWuan-eDem.
Advanced Process Technology
Dynamic dv/dt Rating
175° ..
IRF1310NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1310NSTRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91514BIRF1310NS/L®HEXFET Power MOSFETl Advanced Process Technology DV =100Vl Surface Mount (IR ..
IRF1310NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationswhtmstiite Maximum Ratings
Parameter Max. Units
ID @ TC _ 25'C Canllnuous Dram Curr ..
IRF1310S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IS61LV2568-12K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256-8TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IRF1310N
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220TO-220ABcontribute to its wide acceptance throughout theindustry.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 42D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 30 AD C GSI Pulsed Drain Current 140DMP @T = 25°C Power Dissipation 160 WD CLinear Derating Factor 1.1 W/°CV Gate-to-Source Voltage ± 20 VGSE Single Pulse Avalanche Energy 420 mJASI Avalanche Current 22 AARE Repetitive Avalanche Energy 16 mJARdv/dt Peak Diode Recovery dv/dt 5.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.95θJCR Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WθCSR Junction-to-Ambient ––– 62θJA5/14/98IRF1310N
