IRF130 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VPD - 90333F IRF13 ..
IRF1302S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF1302S IRF1302LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF131 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VElectrical Characteristics (T c= 25°C unless otherwise noted)
Symbol Characteristic Min Max Unlt T ..
IRF1310N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF1310NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR RectifierWuan-eDem.
Advanced Process Technology
Dynamic dv/dt Rating
175° ..
IRF1310NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IS61LV256-20J , 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV2568-10T , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-12K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IRF130
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V
PD - 90333F
International
IEZR Rectifier
IRF130
REPETITIVE AVALANCHEAND dv/dt RATED J AN TX2N67 56
HEXFET®TRANSISTORS JANTXV2N6756
THRU-HOLE (TO-204AA/AE) TREF:MIL-PRF-19S00/542l
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) m
IRF130 100V 0.189 14A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability. TO'3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. ll Repetitive Avalanche Ratings
They are well suited for applications such as switching © Dynamlc dv/dt Rating
power supplies, motor controls, inverters, choppers, audio I: Hermetically Sealed
amplifiers and high energy pulse circuits. ll Simple Drive Requirements
ll Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS =0V, TC = 25°C Continuous Drain Current 14
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 9.0 A
IDM Pulsed Drain Current C) 56
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.60 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 75 mJ
IAR Avalanche Current Cf) 14 A
EAR Repetitive Avalanche Energy co 7.5 m.)
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/22/01
IRF130
International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.13 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.18 VGS = 10V, ID = 9.0AC0
Resistance - - 0.21 VGS = 10V, ID =14A®
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 4.6 - - S (V) VDS > 15V, IDS = 9.0A©
IDSS Zero Gate Voltage Drain Current - - 25 VDS=80V,VGS=0V
- - 250 HA VDs = 80V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGs=20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge 12 - 35 VGS =10V, ID=l4A
Qgs Gate-to-Source Charge 2.5 - 1 0 nC VDS = 50V
Qgd Gate-to-Drain ('Miller') Charge 5.0 - 15
td(on) Turn-On Delay Time - - 35 VDD =50V, ID =14A,
tr Rise Time - - 80 RG =7.5f2
tti(om Turn-Off Delay Time - - 60 ns
tf Fall Time - - 45
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/O.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 650 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 250 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 44 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 14 A
ISM Pulse Source Current (Body Diode) C) - - 56
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, IS = 14A, VGS = 0V co
trr Reverse Recovery Time - - 300 nS Tj = 25°C, IF = 14A, di/dt S 100A/ys
QRR Reverse Recovery Charge - - 3.0 pC VDD S 50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.67 'C/W
RthJ A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
