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IRF1104LIRN/a2avai40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF1104SIRN/a4800avai40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF1104S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF123 ,N-Channel Power MOSFETs/ 11 A/ 60-100 VElectrical Characteristics (T C: 25°C unless otherwise noted) Symbol Characteristic Min Max Unit T ..
IRF130 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VPD - 90333F IRF13 ..
IRF1302S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF1302S IRF1302LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF131 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VElectrical Characteristics (T c= 25°C unless otherwise noted) Symbol Characteristic Min Max Unlt T ..
IRF1310N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
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IRF1104L-IRF1104S
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V… 100†D C GSI @ T = 100°C Continuous Drain Current, V @ 10V… 71† AD C GSI Pulsed Drain Current …� 400DMP @T = 25°C Power Dissipation 2.4 WD AP @T = 25°C Power Dissipation 170 WD CLinear Derating Factor 1.1 W/°CV Gate-to-Source Voltage ±20 VGSE Single Pulse Avalanche Energy‚… 350 mJASI Avalanche Current� 60 AARE Repetitive Avalanche Energy� 17 mJARdv/dt Peak Diode Recovery dv/dt ƒ… 5.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.9θJC°C/WR Junction-to-Ambient(PCB Mounted,steady-state)** ––– 62θJA 111/20/98Downloaded from: http://www.ic-phoenix.com/stock/IRF1104S/L
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