IRF1104 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resista ..
IRF1104L ,40V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD -91845IRF1104S/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceV = 4 ..
IRF1104S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF123 ,N-Channel Power MOSFETs/ 11 A/ 60-100 VElectrical Characteristics (T C: 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit T ..
IRF130 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VPD - 90333F IRF13 ..
IRF1302S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF1302S IRF1302LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IS61LV25616L-10T , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12KI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12TI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV256-20J , 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV2568-10T , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-12K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IRF1104
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
applications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resistance and low package cost of the TO-220 contribute to its wideacceptance throughout the industry.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 100
D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 71 AD C GSI Pulsed Drain Current 400DMP @T = 25°C Power Dissipation 170 WD CLinear Derating Factor 1.11 W/°CV Gate-to-Source Voltage ± 20 VGSE Single Pulse Avalanche Energy 350 mJASI Avalanche Current 60 AARE Repetitive Avalanche Energy 17 mJARdv/dt Peak Diode Recovery dv/dt 5.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature Range°CSTGSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.90θJCR Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WθCSR Junction-to-Ambient ––– 62θJA 14/24/98IRF1104
