IRF1018EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification inDSMPSV60VDSSUninter ..
IRF1018EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRF1018EPbFIRF1018ESPbFIRF1018ESLPbF
IRF1104 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resista ..
IRF1104L ,40V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD -91845IRF1104S/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceV = 4 ..
IRF1104S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF123 ,N-Channel Power MOSFETs/ 11 A/ 60-100 VElectrical Characteristics (T C: 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit T ..
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IRF1018EPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
ApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification inDSMPSV60VDSSUninterruptible Power SupplyR typ.7.1mDS(on)High Speed Power SwitchingHard Switched and High Frequency Circuits G max. 8.4mI79AS D Benefits Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDD Fully Characterized Capacitance andAvalanche SOA Enhanced body diode dV/dt and dI/dtSS SDD DCapability GG G2D PakTO-262TO-220ABIRF1018ESPbFIRF1018EPbF IRF1018ESLPbFGD SGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 79D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 56D C GS AI Pulsed Drain Current 315DMP @T = 25°C Maximum Power Dissipation 110 WD CLinear Derating Factor 0.76W/°CV Gate-to-Source Voltage ± 20 VGSPeak Diode Recovery 21dv/dt V/nsT Operating Junction and -55 to + 175 °CJ TStorage Temperature RangeSTG300Soldering Temperature, for 10 seconds(1.6mm from case)10lb in (1.1N m)Mounting torque, 6-32 or M3 screw Avalanche CharacteristicsSingle Pulse Avalanche Energy E88 mJAS (Thermally limited) Avalanche Current I47 AARRepetitive Avalanche Energy E 11mJARThermal ResistanceSymbol Parameter Typ. Max. UnitsR Junction-to-Case ––– 1.32JC θR Case-to-Sink, Flat Greased Surface , TO-220 0.50 –––CS θ°C/WR Junction-to-Ambient, TO-220 ––– 62θJA 2R ––– 40θJA Junction-to-Ambient (PCB Mount) , D Pak 12/28/08Downloaded from: http://www.ic-phoenix.com/stock/ Static @ T = 25°C (unless otherwise specified)JSymbol Parameter Min. Typ. Max. Units ConditionsV Drain-to-Source Breakdown Voltage 60 ––– ––– V V = 0V, I = 250μA(BR)DSS GS DΔV /ΔT Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C Reference to 25°C, I = 5mA(BR)DSS J DRStatic Drain-to-Source On-Resistance ––– 7.1 8.4 V = 10V, I = 47A DS(on) mΩ GS DV Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 100μAGS(th)DS GS DI Drain-to-Source Leakage Current ––– ––– 20μA V = 60V, V = 0VDSSDS GS––– ––– 250 V = 48V, V = 0V, T = 125°CDS GS JIGate-to-Source Forward Leakage ––– ––– 100 nA V = 20VGSS GSGate-to-Source Reverse Leakage ––– ––– -100 V = -20VGSDynamic @ T = 25°C (unless otherwise specified)JSymbol Parameter Min. Typ. Max. Units Conditionsgfs Forward Transconductance 110 ––– ––– S V = 50V, I = 47ADS DQ Total Gate Charge ––– 46 69 nC I = 47Ag DQGate-to-Source Charge ––– 10 ––– V = 30Vgs DSQGate-to-Drain ("Miller") Charge ––– 12 ––– V = 10V gd GSQ Total Gate Charge Sync. (Q - Q ) ––– 34 ––– I = 47A, V =0V, V = 10V sync g gdD DS GSR –––Internal Gate Resistance 0.73 ––– ΩG(int)t Turn-On Delay Time ––– 13 ––– ns V = 39Vd(on) DDtRise Time ––– 35 ––– I = 47Ar DtTurn-Off Delay Time ––– 55 ––– R = 10Ωd(off) Gt Fall Time ––– 46 ––– V = 10V fGSC Input Capacitance ––– 2290 ––– V = 0VissGSC Output Capacitance ––– 270 ––– V = 50Voss DSCReverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHzrssC eff. (ER)Effective Output Capacitance (Energy Related) ––– 390 ––– V = 0V, V = 0V to 60V oss GS DSC eff. (TR) Effective Output Capacitance (Time Related) ––– 630 ––– V = 0V, V = 0V to 60V ossGS DS
