IRF1010Z ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures ofthis design are a 175°C junction operating tempera-ture, fast switching speed and impro ..
IRF1010Z ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications, DS®this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extre ..
IRF1010ZL ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.IRF1010ZIRF1010ZS IRF1010ZLAbsolute Maximum RatingsParameter Max. UnitsContinuous Drai ..
IRF1010ZS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET● Advanced Process TechnologyD● Ultra Low On-ResistanceV = 55V● 175°C O ..
IRF1018EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification inDSMPSV60VDSSUninter ..
IRF1018EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRF1018EPbFIRF1018ESPbFIRF1018ESLPbF
IS61LV25616AL-12T , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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IRF1010Z-IRF1010ZL-IRF1010ZS
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
applications.IRF1010ZIRF1010ZS IRF1010ZLAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V (Silicon Limited)I @ T = 25°C 94GSD CContinuous Drain Current, V @ 10V I @ T = 100°C 66 AGSD CContinuous Drain Current, V @ 10V (Package Limited)I @ T = 25°C 75GSD CPulsed Drain Current
