IRF1010NSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1010NSTRRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 95103IRF1010NSPbFIRF1010NLPbF Advanced Process Technology® Ultra Low On-ResistanceHEXFET Pow ..
IRF1010Z ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures ofthis design are a 175°C junction operating tempera-ture, fast switching speed and impro ..
IRF1010Z ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications, DS®this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extre ..
IRF1010ZL ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.IRF1010ZIRF1010ZS IRF1010ZLAbsolute Maximum RatingsParameter Max. UnitsContinuous Drai ..
IRF1010ZS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET● Advanced Process TechnologyD● Ultra Low On-ResistanceV = 55V● 175°C O ..
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IRF1010NSTRLPBF-IRF1010NSTRRPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 85D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 60 AD C GSI Pulsed Drain Current 290DMP @T = 25°C Power Dissipation 180 WD CLinear Derating Factor 1.2 W/°CV Gate-to-Source Voltage ± 20 VGSI Avalanche Current 43 AARE Repetitive Avalanche Energy 18 mJARdv/dt Peak Diode Recovery dv/dt 3.6 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case 0.85θJCR Junction-to-Ambient ( PCB Mounted,steady-state)** 40 °C/WθJA 1Downloaded from: http://www.ic-phoenix.com/stock/
