IRF1010N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
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IRF1010N
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeTO-220ABto its wide acceptance throughout the industry.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 85‡D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 60 AD C GSI Pulsed Drain Current � 290DMP @T = 25°C Power Dissipation 180 WD CLinear Derating Factor 1.2 W/°CV Gate-to-Source Voltage ± 20 VGSI Avalanche Current� 43 AARE Repetitive Avalanche Energy� 18 mJARdv/dt Peak Diode Recovery dv/dt ƒ 3.6 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.85θJCR Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WθCSR Junction-to-Ambient ––– 62θJA 13/16/01Downloaded from: http://www.ic-phoenix.com/stock/IRF1010N
